Fabrication of silicon nanowire structures based on proximity effects of electron-beam lithography

S. F. Hu, W. C. Weng, Y. M. Wan

研究成果: 雜誌貢獻文章

13 引文 斯高帕斯(Scopus)

摘要

One-dimensional silicon nanowire structures have been successfully made by using the proximity and accumulation effects of electron-beam (e-beam) lithography. Wire structures are fabricated in a thin poly silicon layer on a silicon substrate with a 400 nm buried SiO2. Measurements of the current-voltage characteristics at various temperatures from 35 to 200 K show significant non-linearities and conductance peaks indicating the existence of single-electron behavior. The blockade size is significantly affected by thermal effects, oscillations of the blockade, and the conductivity dependence on the gate potential.

原文英語
頁(從 - 到)111-114
頁數4
期刊Solid State Communications
130
發行號1-2
DOIs
出版狀態已發佈 - 2004 四月 1

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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