Fabrication of one-dimensional silicon nano-wires based on proximity effects of electron-beam lithography

S. F. Hu, C. L. Sung

研究成果: 雜誌貢獻Conference article同行評審

摘要

One-dimensional silicon nanowire structures have been successfully made by using the proximity and accumulation effects of electron-beam (e-beam) lithography. Wire structures are fabricated in a thin poly silicon layer on a silicon substrate with a 400 nm buried SiO2. Measurements of the current-voltage characteristics at various temperatures from 4 K up to 300 K show significant nonlinearities and single-electron effect behavior. The blockade size is significantly affected by thermal effects, oscillations of the blockade, and the conductivity dependence on the gate potential.

原文英語
文章編號A8.6
頁(從 - 到)357-362
頁數6
期刊Materials Research Society Symposium Proceedings
862
DOIs
出版狀態已發佈 - 2005 一月 1
事件2005 Materials Research Society Spring Meeting - San Francisco, CA, 美国
持續時間: 2005 三月 282005 四月 1

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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