Fabrication and transport studies on PrBa2(Cu1-xMx)3O7: M = Ga, Zn, and Co

U. Tipparach*, T. P. Chen, J. L. Wagner, K. Wu, Q. Y. Chen, Q. Li, J. T. Wang, H. C. Yang, H. E. Horng

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

7 引文 斯高帕斯(Scopus)

摘要

We have fabricated M-doped PrBa2Cu3O7 (Pr123), i.e. PrBa2(Cu1-xMx)3O7 for M = Zn, Ga, and Co, with x = 0.05, 0.10, 0.15, and 0.20. Experimental data indicates single phase samples for the Ga and Co doping up to 20% level. Second phases appear in Zn-doped samples when the doping level reaches 0.15. At 77 K the electrical resistivity of these compounds is several orders of magnitude higher than that of undoped Pr123. We also found no orthorhombic to tetragonal phase transition in the doped samples with all samples remaining in orthorhombic. Their lattices parameters are very close to those of YBa2Cu3O7-δ (Y123). For this reason these compounds may serve as improved buffer-layer materials for Y123 superconducting electronic circuits and devices.

原文英語
頁(從 - 到)404-407
頁數4
期刊Physica C: Superconductivity and its applications
364-365
DOIs
出版狀態已發佈 - 2001 11月
對外發佈

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 能源工程與電力技術
  • 電氣與電子工程

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