Fabrication and characterization of GaN-based LEDs grown on chemical wet-etched patterned sapphire substrates

Y. J. Lee*, H. C. Kuo, T. C. Lu, B. J. Su, S. C. Wang

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

46 引文 斯高帕斯(Scopus)

摘要

Characteristics of GaN -based light-emitting diodes (LEDs) grown on the chemical wet-etched patterned sapphire substrates (CWE-PSS) with different crystallography-etched facets were investigated. An improvement of 40% on the overall quantum efficiency was achieved by adopting this CWE-PSS scheme. A Monte Carlo ray-tracing method was employed to derive the optimized condition of sapphire etching time, and the calculated result demonstrated the same trend with real device measurement. Adopting the CWE-PSS in LEDs could not only improve the epitaxial quality but also increase the extraction quantum efficiency due to crystallography-etched facets efficiently scattering the guided light to enter the escape cone on the top of device surfaces. Finally, we observed better aging behaviors of CWE-PSS LEDs, which could be due to the reduction of threading dislocations of the epitaxial layers.The Electrochemical Society

原文英語
文章編號074612JES
頁(從 - 到)G1106-G1111
期刊Journal of the Electrochemical Society
153
發行號12
DOIs
出版狀態已發佈 - 2006
對外發佈

ASJC Scopus subject areas

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 表面、塗料和薄膜
  • 電化學
  • 材料化學

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