摘要
Characteristics of GaN -based light-emitting diodes (LEDs) grown on the chemical wet-etched patterned sapphire substrates (CWE-PSS) with different crystallography-etched facets were investigated. An improvement of 40% on the overall quantum efficiency was achieved by adopting this CWE-PSS scheme. A Monte Carlo ray-tracing method was employed to derive the optimized condition of sapphire etching time, and the calculated result demonstrated the same trend with real device measurement. Adopting the CWE-PSS in LEDs could not only improve the epitaxial quality but also increase the extraction quantum efficiency due to crystallography-etched facets efficiently scattering the guided light to enter the escape cone on the top of device surfaces. Finally, we observed better aging behaviors of CWE-PSS LEDs, which could be due to the reduction of threading dislocations of the epitaxial layers.The Electrochemical Society
原文 | 英語 |
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文章編號 | 074612JES |
頁(從 - 到) | G1106-G1111 |
期刊 | Journal of the Electrochemical Society |
卷 | 153 |
發行號 | 12 |
DOIs | |
出版狀態 | 已發佈 - 2006 |
對外發佈 | 是 |
ASJC Scopus subject areas
- 電子、光磁材料
- 可再生能源、永續發展與環境
- 表面、塗料和薄膜
- 電化學
- 材料化學