Fabrication and characterization of Co(11̄00)/Mo(211) and Co(112̄0)/Mo(100) bilayered films on MgO

Y. D. Yao*, Y. Liou, J. C.A. Huang, S. Y. Liao, I. Klik, C. P. Chang, C. K. Lo

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

5 引文 斯高帕斯(Scopus)

摘要

Co/Mo bilayered films have been successfully grown on MgO(100) and MgO(110) substrates by molecular beam epitaxy. According to the reflection high energy electron diffraction and x-ray diffraction measurements the crystal structure of the film depends on the orientation of the buffer and substrate. The growth of biaxial Co(112̄0)/Mo(100) on MgO(100) and of uniaxial Co(11̄00)/Mo(211) on MgO(11̄00) substrates has been confirmed. The anisotropic magnetoresistance (AMR) is strongly influenced by the Co orientation which is altered by growth on Mo/MgO(100) and MgO(110). In Co(112̄0)/Mo(100) on MgO(110) AMR is isotropic for all in-plane fields. However, for Co(11̄00)/Mo(211) on MgO(110) we observed enhancement of AMR along the easy axis at 10 °K.

原文英語
頁(從 - 到)4669-4671
頁數3
期刊IEEE Transactions on Magnetics
32
發行號5 PART 2
DOIs
出版狀態已發佈 - 1996

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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