Fabrication and characterization of amorphous In-Zn-O/SiOx/n-Si heterojunction solar cells

Hau Wei Fang; Shiu Jen Liu; Tsung Eong Hsieh; Jenh Yih Juang; Jang Hsing Hsieh

doi:10.1016/j.solener.2011.07.016

Fabrication and characterization of amorphous In-Zn-O/SiO_x/n-Si heterojunction solar cells

Hau Wei Fang, Shiu Jen Liu^*, Tsung Eong Hsieh, Jenh Yih Juang, Jang Hsing Hsieh

^*此作品的通信作者

物理學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

11 引文斯高帕斯（Scopus）

摘要

Amorphous In-Zn-O (a-IZO) films were deposited on SiO_x covered n-type Si substrates by using pulsed laser deposition (PLD) technique to form a-IZO/SiO_x/n-Si heterojunction solar cells. The a-IZO films grown at 150°C with various laser power (250-500mJ/pulse) exhibit low resistivity (2-3×10^-3Ωcm) and high transparency (∼80%) in the visible wavelength range. The highest conversion efficiency of the fabricated a-IZO/SiO_x/n-Si solar cells is 2.2% under 100mW/cm² illumination (AM1.5 condition). The open-circuit voltage, short-circuit current density and fill factor of the best device are 0.24V, 28.4mA/cm² and 33.6%, respectively.

原文	英語
頁（從 - 到）	2589-2594
頁數	6
期刊	Solar Energy
卷	85
發行號	11
DOIs	https://doi.org/10.1016/j.solener.2011.07.016
出版狀態	已發佈 - 2011 11月

ASJC Scopus subject areas

可再生能源、永續發展與環境
一般材料科學

UN SDG

此研究成果有助於以下永續發展目標

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10.1016/j.solener.2011.07.016

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引用此

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title = "Fabrication and characterization of amorphous In-Zn-O/SiOx/n-Si heterojunction solar cells",

abstract = "Amorphous In-Zn-O (a-IZO) films were deposited on SiOx covered n-type Si substrates by using pulsed laser deposition (PLD) technique to form a-IZO/SiOx/n-Si heterojunction solar cells. The a-IZO films grown at 150°C with various laser power (250-500mJ/pulse) exhibit low resistivity (2-3×10-3Ωcm) and high transparency (∼80%) in the visible wavelength range. The highest conversion efficiency of the fabricated a-IZO/SiOx/n-Si solar cells is 2.2% under 100mW/cm2 illumination (AM1.5 condition). The open-circuit voltage, short-circuit current density and fill factor of the best device are 0.24V, 28.4mA/cm2 and 33.6%, respectively.",

keywords = "Amorphous In-Zn-O film, Photovoltaic characteristics, Pulsed laser deposition, Semiconductor-insulator-semiconductor solar cell",

author = "Fang, {Hau Wei} and Liu, {Shiu Jen} and Hsieh, {Tsung Eong} and Juang, {Jenh Yih} and Hsieh, {Jang Hsing}",

note = "Funding Information: This work was supported by the National Science Council of Taiwan , under Grant No. NSC 98-2112-M-003-005-MY3 .",

year = "2011",

month = nov,

doi = "10.1016/j.solener.2011.07.016",

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journal = "Solar Energy",

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T1 - Fabrication and characterization of amorphous In-Zn-O/SiOx/n-Si heterojunction solar cells

AU - Fang, Hau Wei

AU - Liu, Shiu Jen

AU - Hsieh, Tsung Eong

AU - Juang, Jenh Yih

AU - Hsieh, Jang Hsing

N1 - Funding Information: This work was supported by the National Science Council of Taiwan , under Grant No. NSC 98-2112-M-003-005-MY3 .

PY - 2011/11

Y1 - 2011/11

N2 - Amorphous In-Zn-O (a-IZO) films were deposited on SiOx covered n-type Si substrates by using pulsed laser deposition (PLD) technique to form a-IZO/SiOx/n-Si heterojunction solar cells. The a-IZO films grown at 150°C with various laser power (250-500mJ/pulse) exhibit low resistivity (2-3×10-3Ωcm) and high transparency (∼80%) in the visible wavelength range. The highest conversion efficiency of the fabricated a-IZO/SiOx/n-Si solar cells is 2.2% under 100mW/cm2 illumination (AM1.5 condition). The open-circuit voltage, short-circuit current density and fill factor of the best device are 0.24V, 28.4mA/cm2 and 33.6%, respectively.

AB - Amorphous In-Zn-O (a-IZO) films were deposited on SiOx covered n-type Si substrates by using pulsed laser deposition (PLD) technique to form a-IZO/SiOx/n-Si heterojunction solar cells. The a-IZO films grown at 150°C with various laser power (250-500mJ/pulse) exhibit low resistivity (2-3×10-3Ωcm) and high transparency (∼80%) in the visible wavelength range. The highest conversion efficiency of the fabricated a-IZO/SiOx/n-Si solar cells is 2.2% under 100mW/cm2 illumination (AM1.5 condition). The open-circuit voltage, short-circuit current density and fill factor of the best device are 0.24V, 28.4mA/cm2 and 33.6%, respectively.

KW - Amorphous In-Zn-O film

KW - Photovoltaic characteristics

KW - Pulsed laser deposition

KW - Semiconductor-insulator-semiconductor solar cell

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