Amorphous In-Zn-O (a-IZO) films were deposited on SiOx covered n-type Si substrates by using pulsed laser deposition (PLD) technique to form a-IZO/SiOx/n-Si heterojunction solar cells. The a-IZO films grown at 150°C with various laser power (250-500mJ/pulse) exhibit low resistivity (2-3×10-3Ωcm) and high transparency (∼80%) in the visible wavelength range. The highest conversion efficiency of the fabricated a-IZO/SiOx/n-Si solar cells is 2.2% under 100mW/cm2 illumination (AM1.5 condition). The open-circuit voltage, short-circuit current density and fill factor of the best device are 0.24V, 28.4mA/cm2 and 33.6%, respectively.
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