Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs

M. H. Lee, K. T. Chen, C. Y. Liao, S. S. Gu, G. Y. Siang, Y. C. Chou, H. Y. Chen, J. Le, R. C. Hong, Z. Y. Wang, S. Y. Chen, P. G. Chen, M. Tang, Y. D. Lin, H. Y. Lee, K. S. Li, C. W. Liu

研究成果: 書貢獻/報告類型會議論文篇章

14 引文 斯高帕斯(Scopus)

摘要

Extremely steep switch of negative-capacitance (NC) Nanosheet (NS) GAA-FETs and FinFETs are experimentally presented with SS avg SS =22/14 mV dec and SS avg SS =38/21 mV dec, respectively. The sub-60m V/dec current magnitude of sub-60mV/dec is >4 and ∼5 decades for NC-NSGAA and NC-FinFET, respectively. Both NC-NSGAA and NC-FinFET exhibit extremely steep switch behavior due to FET scale down to nano-scale and comparable domain size of polycrystalline HZO. The dramatic current switch with steep slope is measured with only several dipole domains flipping over with gate voltage applied. The apparent Negative-DIBL and NDR (Negative Differential Resistance) are observed due to strong NC boost. The SS depends on WFin/L ratio, and W Fin < L is the solution to achieve sub-60m V/dec. The super-steep slope on current behavior still occurs after multiple DC sweep. The uniform size of each NS for stacked NC-NSGAA is an important issue to optimize the NC effect with SS =19 mV/ dec due to single T NS for capacitance matching by modeling.

原文英語
主出版物標題2018 IEEE International Electron Devices Meeting, IEDM 2018
發行者Institute of Electrical and Electronics Engineers Inc.
頁面31.8.1-31.8.4
ISBN(電子)9781728119878
DOIs
出版狀態已發佈 - 2019 一月 16
事件64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, 美国
持續時間: 2018 十二月 12018 十二月 5

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2018-December
ISSN(列印)0163-1918

會議

會議64th Annual IEEE International Electron Devices Meeting, IEDM 2018
國家/地區美国
城市San Francisco
期間2018/12/012018/12/05

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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