Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N2O-grown oxides and NO RTA treatment

C. H. Liu, Hsiu Shan Lin, Yu Yin Lin, M. G. Chen, T. M. Pan, C. J. Kao, K. T. Huang, S. H. Lin, Y. C. Sheng, Wen Tung Chang, J. H. Lee, M. Huang, Chiung Sheng Hsiung, S. Huang-Lu, Chen Chung Hsu, A. Y. Liang, Jenkon Chen, W. Y. Hsieh, P. W. Yen, S. C. ChienY. T. Loh, Y. J. Chang, Fu Tai Liou

研究成果: 書貢獻/報告類型會議論文篇章

1 引文 斯高帕斯(Scopus)

摘要

Ultra-thin gate dielectrics processed by remote plasma nitridation (RPN) of N2O-grown oxides subsequently followed by NO RTA treatment (N2O+RPN+NO process) are reported for the first time as a means to extend the reliability scaling limit of SiO2- / oxynitride-based gate dielectrics. These films show superior interface properties, significantly reduced leakage current, and improved reliability compared to other gate dielectrics of similar thickness (∼1.4 nm) fabricated by different processes.

原文英語
主出版物標題2002 IEEE International Reliability Physics Symposium Proceedings, IRPS 2002 - 40th Annual
發行者Institute of Electrical and Electronics Engineers Inc.
頁面268-271
頁數4
ISBN(電子)0780373529
DOIs
出版狀態已發佈 - 2002
對外發佈
事件40th Annual IEEE International Reliability Physics Symposium, IRPS 2002 - Dallas, 美国
持續時間: 2002 四月 72002 四月 11

出版系列

名字IEEE International Reliability Physics Symposium Proceedings
2002-January
ISSN(列印)1541-7026

會議

會議40th Annual IEEE International Reliability Physics Symposium, IRPS 2002
國家/地區美国
城市Dallas
期間2002/04/072002/04/11

ASJC Scopus subject areas

  • 工程 (全部)

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