Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N2O-grown oxides and NO RTA treatment

Chuan H. Liu; Hsiu Shan Lin; Yu Yin Lin; M. G. Chen; T. M. Pan; C. J. Kao; K. T. Huang; S. H. Lin; Y. C. Sheng; Wen Tung Chang; J. H. Lee; M. Huang; Chiung Sheng Hsiung; S. Huang-Lu; Chen Chung Hsu; Alan Y. Liang; Jenkon Chen; W. Y. Hsieh; P. W. Yen; S. C. Chien; Y. T. Loh; Yih J. Chang; Fu Tai Liou

Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N₂O-grown oxides and NO RTA treatment

Chuan H. Liu^*, Hsiu Shan Lin, Yu Yin Lin, M. G. Chen, T. M. Pan, C. J. Kao, K. T. Huang, S. H. Lin, Y. C. Sheng, Wen Tung Chang, J. H. Lee, M. Huang, Chiung Sheng Hsiung, S. Huang-Lu, Chen Chung Hsu, Alan Y. Liang, Jenkon Chen, W. Y. Hsieh, P. W. Yen, S. C. ChienY. T. Loh, Yih J. Chang, Fu Tai Liou

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研究成果: 雜誌貢獻 › 會議論文 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

A gate dielectric process was developed by remote plasma nitridation of N₂O oxides with rapid thermal NO annealing. Superior interface properties, reduced leakage current and improved reliability was shown by the films. The stress induced leakage current (SILC) was shown as a function of stress time under constant voltage stress of 2.6 V in inversion mode and stress temperature of 160°C.

原文	英語
頁（從 - 到）	268-271
頁數	4
期刊	Annual Proceedings - Reliability Physics (Symposium)
出版狀態	已發佈 - 2002
對外發佈	是
事件	Proceedings of the 2002 40th annual IEEE International Relaibility Physics Symposium Proceedings - Dallas, TX, 美国持續時間: 2002 4月 7 → 2002 4月 11

ASJC Scopus subject areas

電氣與電子工程
安全、風險、可靠性和品質

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Liu, C. H., Lin, H. S., Lin, Y. Y., Chen, M. G., Pan, T. M., Kao, C. J., Huang, K. T., Lin, S. H., Sheng, Y. C., Chang, W. T., Lee, J. H., Huang, M., Hsiung, C. S., Huang-Lu, S., Hsu, C. C., Liang, A. Y., Chen, J., Hsieh, W. Y., Yen, P. W., ... Liou, F. T. (2002). Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N₂O-grown oxides and NO RTA treatment. Annual Proceedings - Reliability Physics (Symposium), 268-271.

Liu, CH, Lin, HS, Lin, YY, Chen, MG, Pan, TM, Kao, CJ, Huang, KT, Lin, SH, Sheng, YC, Chang, WT, Lee, JH, Huang, M, Hsiung, CS, Huang-Lu, S, Hsu, CC, Liang, AY, Chen, J, Hsieh, WY, Yen, PW, Chien, SC, Loh, YT, Chang, YJ & Liou, FT 2002, 'Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N₂O-grown oxides and NO RTA treatment', Annual Proceedings - Reliability Physics (Symposium), 頁 268-271.

@article{336a498d6e1746dc80076cfbd5fe8e90,

title = "Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N2O-grown oxides and NO RTA treatment",

abstract = "A gate dielectric process was developed by remote plasma nitridation of N2O oxides with rapid thermal NO annealing. Superior interface properties, reduced leakage current and improved reliability was shown by the films. The stress induced leakage current (SILC) was shown as a function of stress time under constant voltage stress of 2.6 V in inversion mode and stress temperature of 160°C.",

author = "Liu, {Chuan H.} and Lin, {Hsiu Shan} and Lin, {Yu Yin} and Chen, {M. G.} and Pan, {T. M.} and Kao, {C. J.} and Huang, {K. T.} and Lin, {S. H.} and Sheng, {Y. C.} and Chang, {Wen Tung} and Lee, {J. H.} and M. Huang and Hsiung, {Chiung Sheng} and S. Huang-Lu and Hsu, {Chen Chung} and Liang, {Alan Y.} and Jenkon Chen and Hsieh, {W. Y.} and Yen, {P. W.} and Chien, {S. C.} and Loh, {Y. T.} and Chang, {Yih J.} and Liou, {Fu Tai}",

year = "2002",

language = "English",

pages = "268--271",

journal = "Annual Proceedings - Reliability Physics (Symposium)",

issn = "0099-9512",

note = "Proceedings of the 2002 40th annual IEEE International Relaibility Physics Symposium Proceedings ; Conference date: 07-04-2002 Through 11-04-2002",

}

TY - JOUR

T1 - Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N2O-grown oxides and NO RTA treatment

AU - Liu, Chuan H.

AU - Lin, Hsiu Shan

AU - Lin, Yu Yin

AU - Chen, M. G.

AU - Pan, T. M.

AU - Kao, C. J.

AU - Huang, K. T.

AU - Lin, S. H.

AU - Sheng, Y. C.

AU - Chang, Wen Tung

AU - Lee, J. H.

AU - Huang, M.

AU - Hsiung, Chiung Sheng

AU - Huang-Lu, S.

AU - Hsu, Chen Chung

AU - Liang, Alan Y.

AU - Chen, Jenkon

AU - Hsieh, W. Y.

AU - Yen, P. W.

AU - Chien, S. C.

AU - Loh, Y. T.

AU - Chang, Yih J.

AU - Liou, Fu Tai

PY - 2002

Y1 - 2002

N2 - A gate dielectric process was developed by remote plasma nitridation of N2O oxides with rapid thermal NO annealing. Superior interface properties, reduced leakage current and improved reliability was shown by the films. The stress induced leakage current (SILC) was shown as a function of stress time under constant voltage stress of 2.6 V in inversion mode and stress temperature of 160°C.

AB - A gate dielectric process was developed by remote plasma nitridation of N2O oxides with rapid thermal NO annealing. Superior interface properties, reduced leakage current and improved reliability was shown by the films. The stress induced leakage current (SILC) was shown as a function of stress time under constant voltage stress of 2.6 V in inversion mode and stress temperature of 160°C.

UR - http://www.scopus.com/inward/record.url?scp=0036088459&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036088459&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036088459

SN - 0099-9512

SP - 268

EP - 271

JO - Annual Proceedings - Reliability Physics (Symposium)

JF - Annual Proceedings - Reliability Physics (Symposium)

T2 - Proceedings of the 2002 40th annual IEEE International Relaibility Physics Symposium Proceedings

Y2 - 7 April 2002 through 11 April 2002

ER -

Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N2O-grown oxides and NO RTA treatment

摘要

ASJC Scopus subject areas

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Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N₂O-grown oxides and NO RTA treatment