Experimental Observation of Negative Capacitance Switching Behavior in One-Transistor Ferroelectric Versatile Memory

Chun Hu Cheng, Yu Chien Chiu, Guan Lin Liou

研究成果: 雜誌貢獻通訊期刊論文同行評審

19 引文 斯高帕斯(Scopus)

摘要

In this work, we investigated the negative capacitance behavior of novel ferroelectric versatile memory with low-voltage-driven and fast ferroelectric switching. The combined storage mechanism strengthened the stability of ferroelectric polarization by interface aligned dipoles. The simulation results of first principle calculation indicated that the monoclinic-like orthorhombic phase of ferroelectric hafnium oxide facilitated the occurrence of S-shaped negative capacitance behavior. Furthermore, the control of phase transition may affect ferroelectric property and negative capacitance effect during program and erase states.

原文英語
文章編號1700098
期刊Physica Status Solidi - Rapid Research Letters
11
發行號10
DOIs
出版狀態已發佈 - 2017 十月

ASJC Scopus subject areas

  • 材料科學(全部)
  • 凝聚態物理學

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