Experimental Insights of Reverse Switching Charge for Antiferroelectric Hf.Zr.O

Experimental insights into a reverse switching charge for antiferroelectric (AFE) Hf0.1Zr0.9O2 are validated by pulse measurement and capacitance-voltage (C-V). The difference between saturation polarization ( $\text{P}_{\mathrm {S}}$ ) and remnant polarization ( $\text{P}_{\mathrm {r}}$ ) plays an important role in the model and is confirmed by the steep and gradual slope of the P-V loop, which is made by AFE and antiferroelectric-dielectric (AFE-DE), respectively. AFE capacitor yield far superior released charge ( $\text{Q}_{\mathrm {D}}$ ) than capacitor of AFE-DE bilayers due to strong reverse switching of $\text{P}_{\mathrm {S}}$ and $\text{P}_{\mathrm {r}}$ difference. A nonhysteretic $\text{Q}_{\mathrm {D}}$ scheme is proposed by alternating bipolar AFE operation without a DE to achieve a bidirectional enhancement. This work demonstrates an experimental $\text{Q}_{\mathrm {D}}$ enhancement by an AFE system and supports the reverse switching concept.