Experimental demonstration of ferroelectric gate-stack AlGaN/GaN-on-Si MOS-HEMTs with voltage amplification for power applications

P. G. Chen, Y. T. Wei, M. Tang, M. H. Lee

研究成果: 雜誌貢獻期刊論文同行評審

15 引文 斯高帕斯(Scopus)

指紋

深入研究「Experimental demonstration of ferroelectric gate-stack AlGaN/GaN-on-Si MOS-HEMTs with voltage amplification for power applications」主題。共同形成了獨特的指紋。

INIS

Material Science