AlGaN/GaN-on-Si metal-oxide-semiconductor high-elec-tron mobility transistors with integrated ferroelectric (FE) polarization gate-stacks improve the subthreshold swing (from 4 to 2 V/decade) and the peak transconductance (gm) (18.4% enhancement) using the negative capacitance (NC) effect. An (IDlin) with ∼23% enhancement and a high overdrive voltage implies a higher d Ψ/dVg) at 2-D electron gas, due to NC with small (VDS). The channel conductance (gd) at almost zero (VDS) exhibits a 33% enhancement due to internal voltage amplification. The polarization is experimentally established with the validity of FE gate-stack with NC characteristics.
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