Experimental demonstration of ferroelectric gate-stack AlGaN/GaN-on-Si MOS-HEMTs with voltage amplification for power applications

P. G. Chen; Y. T. Wei; M. Tang; M. H. Lee

doi:10.1109/TED.2014.2330504

Experimental demonstration of ferroelectric gate-stack AlGaN/GaN-on-Si MOS-HEMTs with voltage amplification for power applications

P. G. Chen, Y. T. Wei, M. Tang, M. H. Lee

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

16 引文斯高帕斯（Scopus）

摘要

AlGaN/GaN-on-Si metal-oxide-semiconductor high-elec-tron mobility transistors with integrated ferroelectric (FE) polarization gate-stacks improve the subthreshold swing (from 4 to 2 V/decade) and the peak transconductance (g_m) (18.4% enhancement) using the negative capacitance (NC) effect. An (I_Dlin) with ∼23% enhancement and a high overdrive voltage implies a higher d Ψ/dV_g) at 2-D electron gas, due to NC with small (V_DS). The channel conductance (g_d) at almost zero (V_DS) exhibits a 33% enhancement due to internal voltage amplification. The polarization is experimentally established with the validity of FE gate-stack with NC characteristics.

原文	英語
文章編號	6845344
頁（從 - 到）	3014-3017
頁數	4
期刊	IEEE Transactions on Electron Devices
卷	61
發行號	8
DOIs	https://doi.org/10.1109/TED.2014.2330504
出版狀態	已發佈 - 2014 8月
對外發佈	是

ASJC Scopus subject areas

電子、光磁材料
電氣與電子工程

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10.1109/TED.2014.2330504

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引用此

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title = "Experimental demonstration of ferroelectric gate-stack AlGaN/GaN-on-Si MOS-HEMTs with voltage amplification for power applications",

abstract = "AlGaN/GaN-on-Si metal-oxide-semiconductor high-elec-tron mobility transistors with integrated ferroelectric (FE) polarization gate-stacks improve the subthreshold swing (from 4 to 2 V/decade) and the peak transconductance (gm) (18.4% enhancement) using the negative capacitance (NC) effect. An (IDlin) with ∼23% enhancement and a high overdrive voltage implies a higher d Ψ/dVg) at 2-D electron gas, due to NC with small (VDS). The channel conductance (gd) at almost zero (VDS) exhibits a 33% enhancement due to internal voltage amplification. The polarization is experimentally established with the validity of FE gate-stack with NC characteristics.",

keywords = "AlGaN/GaN, ferroelectric (FE), subthreshold swing (SS).",

author = "Chen, {P. G.} and Wei, {Y. T.} and M. Tang and Lee, {M. H.}",

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AU - Wei, Y. T.

AU - Tang, M.

AU - Lee, M. H.

PY - 2014/8

Y1 - 2014/8

N2 - AlGaN/GaN-on-Si metal-oxide-semiconductor high-elec-tron mobility transistors with integrated ferroelectric (FE) polarization gate-stacks improve the subthreshold swing (from 4 to 2 V/decade) and the peak transconductance (gm) (18.4% enhancement) using the negative capacitance (NC) effect. An (IDlin) with ∼23% enhancement and a high overdrive voltage implies a higher d Ψ/dVg) at 2-D electron gas, due to NC with small (VDS). The channel conductance (gd) at almost zero (VDS) exhibits a 33% enhancement due to internal voltage amplification. The polarization is experimentally established with the validity of FE gate-stack with NC characteristics.

AB - AlGaN/GaN-on-Si metal-oxide-semiconductor high-elec-tron mobility transistors with integrated ferroelectric (FE) polarization gate-stacks improve the subthreshold swing (from 4 to 2 V/decade) and the peak transconductance (gm) (18.4% enhancement) using the negative capacitance (NC) effect. An (IDlin) with ∼23% enhancement and a high overdrive voltage implies a higher d Ψ/dVg) at 2-D electron gas, due to NC with small (VDS). The channel conductance (gd) at almost zero (VDS) exhibits a 33% enhancement due to internal voltage amplification. The polarization is experimentally established with the validity of FE gate-stack with NC characteristics.

KW - AlGaN/GaN

KW - ferroelectric (FE)

KW - subthreshold swing (SS).

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Experimental demonstration of ferroelectric gate-stack AlGaN/GaN-on-Si MOS-HEMTs with voltage amplification for power applications

摘要

ASJC Scopus subject areas

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