Experimental demonstration of ferroelectric gate-stack AlGaN/GaN-on-Si MOS-HEMTs with voltage amplification for power applications

P. G. Chen, Y. T. Wei, M. Tang, M. H. Lee

研究成果: 雜誌貢獻期刊論文同行評審

12 引文 斯高帕斯(Scopus)

摘要

AlGaN/GaN-on-Si metal-oxide-semiconductor high-elec-tron mobility transistors with integrated ferroelectric (FE) polarization gate-stacks improve the subthreshold swing (from 4 to 2 V/decade) and the peak transconductance (gm) (18.4% enhancement) using the negative capacitance (NC) effect. An (IDlin) with ∼23% enhancement and a high overdrive voltage implies a higher d Ψ/dVg) at 2-D electron gas, due to NC with small (VDS). The channel conductance (gd) at almost zero (VDS) exhibits a 33% enhancement due to internal voltage amplification. The polarization is experimentally established with the validity of FE gate-stack with NC characteristics.

原文英語
文章編號6845344
頁(從 - 到)3014-3017
頁數4
期刊IEEE Transactions on Electron Devices
61
發行號8
DOIs
出版狀態已發佈 - 2014 八月
對外發佈

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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