摘要
The electronic structures of Ni 3Al, Ni 3Ga, Ni 3In, and NiGa are studied by x-ray absorption near-edge spectra (XANES) at the Ni and Ga K edges. The XANES spectra are compared with those calculated with theory. The experimental XANES features for these compounds reflect the Ni- and Ga-p unoccupied density of states. The calculated magnetic moments for Ni 3Al, Ni 3Ga, and Ni 3In are between 0.7-0.8μ B/cell. The number of 3d holes per Ni atom is calculated for Ni 3Al, Ni 3Ga, and Ni 3In. These numbers show correlation with heats of formation of the bulk compounds.
原文 | 英語 |
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頁(從 - 到) | 1419-1424 |
頁數 | 6 |
期刊 | Journal of Applied Physics |
卷 | 92 |
發行號 | 3 |
DOIs | |
出版狀態 | 已發佈 - 2002 8月 1 |
ASJC Scopus subject areas
- 一般物理與天文學