Experimental and theoretical study of the electronic structures of Ni 3Al, Ni 3Ga, Ni 3In, and NiGa

Li Shing Hsu*, Y. K. Wang, G. Y. Guo

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

23 引文 斯高帕斯(Scopus)

摘要

The electronic structures of Ni 3Al, Ni 3Ga, Ni 3In, and NiGa are studied by x-ray absorption near-edge spectra (XANES) at the Ni and Ga K edges. The XANES spectra are compared with those calculated with theory. The experimental XANES features for these compounds reflect the Ni- and Ga-p unoccupied density of states. The calculated magnetic moments for Ni 3Al, Ni 3Ga, and Ni 3In are between 0.7-0.8μ B/cell. The number of 3d holes per Ni atom is calculated for Ni 3Al, Ni 3Ga, and Ni 3In. These numbers show correlation with heats of formation of the bulk compounds.

原文英語
頁(從 - 到)1419-1424
頁數6
期刊Journal of Applied Physics
92
發行號3
DOIs
出版狀態已發佈 - 2002 8月 1
對外發佈

ASJC Scopus subject areas

  • 物理與天文學 (全部)

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