Exciton localization and the Stokes' shift in undoped InGaN/GaN multiquantum wells

Y. F. Chen, T. Y. Lin, H. C. Yang

研究成果: 雜誌貢獻會議論文同行評審

摘要

Optical properties of undoped InGaN/GaN multiquantum wells (MQWs) have been investigated by photoconductivity, photoluminescence, and photoluminescence excitation measurements. We report the first observation of persistent photoconductivity (PPC) in InGaN/GaN MQWs and show that the PPC effect arises from In composition fluctuations in the InGaN well layer. From the analysis of the decay kinetics, the localization depth caused by composition fluctuations has been determined. Compared with the results of complementary absorption and photoluminescence measurements, it is found that the quantum-confined Stark effect due to piezoelectric field and composition fluctuations both exist in the InGaN/GaN MQWs. These two effects are responsible for the photoluminescence Stokes' shift in the InGaN well layers. Here, we provide an unique way to distinguish the individual contribution to the Stokes' shift for the piezoelectric field and composition fluctuations.

原文英語
頁(從 - 到)137-142
頁數6
期刊Proceedings of SPIE - The International Society for Optical Engineering
3938
出版狀態已發佈 - 2000
事件Light-Emitting Diodes: Research, Manufacturing, and Applications IV - San Jose, CA, USA
持續時間: 2000 一月 262000 一月 27

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程

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