Exchange interaction of 3d transition metal impurity with band electrons in diluted magnetic semiconductors

Tzuen Rong Yang*, Mi Ra Kim

*此作品的通信作者

研究成果: 雜誌貢獻會議論文同行評審

摘要

The effects of the exchange interaction between the localized d electrons of manganese ion and the delocalized host band electrons in II1-xMnxVI semiconductors are discussed based on the perturbation scheme and the k·p theory as a function of the manganese composition. We observe that the exchange interaction lead to the red shift of the energy gap and it is shown that the many-body interaction due to exchange play an important role in accurate depiction of the energy gap with variation of the manganese amounts in diluted magnetic semiconductors. In addition, we have compared the results with experimental data of IR spectroscopy.

原文英語
頁(從 - 到)704-711
頁數8
期刊Proceedings of SPIE - The International Society for Optical Engineering
4078
DOIs
出版狀態已發佈 - 2000
事件Optoelectronic Materials and Devices II - Taipei, Taiwan
持續時間: 2000 七月 262000 七月 28

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程

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