摘要
The effects of the exchange interaction between the localized d electrons of manganese ion and the delocalized host band electrons in II1-xMnxVI semiconductors are discussed based on the perturbation scheme and the k·p theory as a function of the manganese composition. We observe that the exchange interaction lead to the red shift of the energy gap and it is shown that the many-body interaction due to exchange play an important role in accurate depiction of the energy gap with variation of the manganese amounts in diluted magnetic semiconductors. In addition, we have compared the results with experimental data of IR spectroscopy.
| 原文 | 英語 |
|---|---|
| 頁（從 - 到） | 704-711 |
| 頁數 | 8 |
| 期刊 | Proceedings of SPIE - The International Society for Optical Engineering |
| 卷 | 4078 |
| DOIs | |
| 出版狀態 | 已發佈 - 2000 |
| 事件 | Optoelectronic Materials and Devices II - Taipei, Taiwan 持續時間: 2000 7月 26 → 2000 7月 28 |
ASJC Scopus subject areas
- 電子、光磁材料
- 凝聚態物理學
- 電腦科學應用
- 應用數學
- 電氣與電子工程