Evolution of the conductivity type in germania by varying the stoichiometry

D. R. Islamov; V. A. Gritsenko; C. H. Cheng; A. Chin

doi:10.1063/1.4838297

Evolution of the conductivity type in germania by varying the stoichiometry

D. R. Islamov
, V. A. Gritsenko
, C. H. Cheng
, A. Chin

機電工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

7 引文斯高帕斯（Scopus）

摘要

Information regarding the conductivity type of Si/GeO_x/Ni structures with various stoichiometry has been obtained using experiments on injection of minority carriers from n- and p-type silicon. Results show that non-stoichiometric GeO_x films exhibit bipolar conductivity, that is, holes as well as electrons contribute to the charge transport. Stoichiometric GeO₂ films exhibit unipolar electron conductivity.

原文	英語
文章編號	232904
期刊	Applied Physics Letters
卷	103
發行號	23
DOIs	https://doi.org/10.1063/1.4838297
出版狀態	已發佈 - 2013 12月 2

ASJC Scopus subject areas

物理與天文學（雜項）

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10.1063/1.4838297

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abstract = "Information regarding the conductivity type of Si/GeOx/Ni structures with various stoichiometry has been obtained using experiments on injection of minority carriers from n- and p-type silicon. Results show that non-stoichiometric GeOx films exhibit bipolar conductivity, that is, holes as well as electrons contribute to the charge transport. Stoichiometric GeO2 films exhibit unipolar electron conductivity.",

author = "Islamov, \{D. R.\} and Gritsenko, \{V. A.\} and Cheng, \{C. H.\} and A. Chin",

note = "Funding Information: This work was supported by projects No. 1.13 and 4.18 of the Siberian Branch of the Russian Academy of Sciences and the National Science Council, Taiwan, under Grant No. NSC-100-2923-E-009-001-MY3.",

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N2 - Information regarding the conductivity type of Si/GeOx/Ni structures with various stoichiometry has been obtained using experiments on injection of minority carriers from n- and p-type silicon. Results show that non-stoichiometric GeOx films exhibit bipolar conductivity, that is, holes as well as electrons contribute to the charge transport. Stoichiometric GeO2 films exhibit unipolar electron conductivity.

AB - Information regarding the conductivity type of Si/GeOx/Ni structures with various stoichiometry has been obtained using experiments on injection of minority carriers from n- and p-type silicon. Results show that non-stoichiometric GeOx films exhibit bipolar conductivity, that is, holes as well as electrons contribute to the charge transport. Stoichiometric GeO2 films exhibit unipolar electron conductivity.

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Evolution of the conductivity type in germania by varying the stoichiometry

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