Evolution of the conductivity type in germania by varying the stoichiometry

D. R. Islamov, V. A. Gritsenko, C. H. Cheng, A. Chin

研究成果: 雜誌貢獻期刊論文同行評審

5 引文 斯高帕斯(Scopus)

摘要

Information regarding the conductivity type of Si/GeOx/Ni structures with various stoichiometry has been obtained using experiments on injection of minority carriers from n- and p-type silicon. Results show that non-stoichiometric GeOx films exhibit bipolar conductivity, that is, holes as well as electrons contribute to the charge transport. Stoichiometric GeO2 films exhibit unipolar electron conductivity.

原文英語
文章編號232904
期刊Applied Physics Letters
103
發行號23
DOIs
出版狀態已發佈 - 2013 12月 2

ASJC Scopus subject areas

  • 物理與天文學(雜項)

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