Evaluation of the nanoindentation behaviors of SiGe epitaxial layer on Si substrate

Bo Ching He, Chun Hu Cheng, Hua Chiang Wen, Yi Shao Lai, Ping Feng Yang, Meng Hung Lin, Wen Fa Wu, Chang Pin Chou

研究成果: 雜誌貢獻文章同行評審

19 引文 斯高帕斯(Scopus)

摘要

In this paper, ultra-high vacuum chemical vapor deposition (UHV/CVD) was employed to synthesize silicon-germanium (SiGe), and sequence to endure annealing treatment. Morphological characterization, roughness, and microstructural morphology were observed by means of scanning electron microscopy (SEM), atomic force microscopy (AFM), and transmission electron microscopy (TEM). The elements distribution, crystallographic, and nanomechanical behavior were carried out using energy-dispersive X-ray spectroscopy (EDS) mapping technique, X-ray diffraction (XRD), and nanoindentation technique. The annealing treated SiGe leads to the 2D germanium segregation on the surface. The phenomenon is interpreted in terms of dislocation-induced structural changes in annealing treatment. Thus, the dislocation propagation in the microstructure was observed. Subsequently hardness and elastic modulus were increased because of a comparatively unstable microstructure after annealing treatment.

原文英語
頁(從 - 到)63-69
頁數7
期刊Microelectronics Reliability
50
發行號1
DOIs
出版狀態已發佈 - 2010 一月 1
對外發佈Yes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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