Evaluation of temperature stability of trilayer resistive memories using work-function tuning

Chun Hu Cheng, Albert Chin

研究成果: 雜誌貢獻文章同行評審

1 引文 斯高帕斯(Scopus)

摘要

A trilayer resistive memory with a low picojoule switching energy shows highly uniform current distribution, fast switching speed of 10 ns, and robust endurance cycling of 106 cycles under high-temperature (343 K) operation. Such good performance is related to high-temperature stable Ni electrode, fast electron hopping via nanocrystallized anatase TiO2, and nonuniform electric-field distribution to dilute cycling stress. The evaluation of thermal stability is mandatory for the application of reliable high-density three-dimensional nonvolatile memory.

原文英語
文章編號041203
期刊Applied Physics Express
6
發行號4
DOIs
出版狀態已發佈 - 2013 四月 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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