Evaluation of Perovskite Hole Selective Contacts for Silicon Solar Cells

Yan Syun Chen, Li Yu Li, Peichen Yu, Yu Chiang Chao, Hsinfei Meng, Sheng Fu Horng

研究成果: 書貢獻/報告類型會議貢獻

摘要

we investigate the potential and stability of perovskite(MaPbI3) as the hole-selective contact materials for silicon solar cells because perovskite has excellent carrier transport properties for both electrons and holes. We have overcome the problem of forming a continuous perovskite thin film on silicon due to low surface energy by engineering the silicon surface roughness and native oxide. As a result, the short-circuit current density (Jsc) of the device with the perovskite layer increases by 0.6mA/cm2 from 27.73 to 28.32 mA/cm2 and the open-circuit voltage (Voc) increases by 5mV from 517.36 to 512.50 mV, reaching a power conversion efficiency of 10.53%. The solar cell with the perovskite(MaPbI3) hole selective layer exhibits better performance than the reference counterpart. Future work will be focused on tuning the composition of the PbBr2 and PbI2 to modify the work function and enlarge the hole selectivity.

原文英語
主出版物標題2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
發行者Institute of Electrical and Electronics Engineers Inc.
頁面2675-2678
頁數4
ISBN(電子)9781728104942
DOIs
出版狀態已發佈 - 2019 六月
事件46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, 美国
持續時間: 2019 六月 162019 六月 21

出版系列

名字Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN(列印)0160-8371

會議

會議46th IEEE Photovoltaic Specialists Conference, PVSC 2019
國家美国
城市Chicago
期間19/6/1619/6/21

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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  • 引用此

    Chen, Y. S., Li, L. Y., Yu, P., Chao, Y. C., Meng, H., & Horng, S. F. (2019). Evaluation of Perovskite Hole Selective Contacts for Silicon Solar Cells. 於 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019 (頁 2675-2678). [8980931] (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC40753.2019.8980931