Etching of YBa2Cu3Oy surface by scanning tunneling microscope

S. Chen; L. M. Wang; H. C. Yang; H. E. Horng

doi:10.1016/0921-4526(94)90525-8

Etching of YBa₂Cu₃O_y surface by scanning tunneling microscope

S. Chen^*, L. M. Wang, H. C. Yang, H. E. Horng

^*此作品的通信作者

光電工程學士學位學程

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

摘要

We report the controlled and systematic modification with scanning tunneling microscope (STM) of the surface in bilayer YBa₂Cu₃O_y PrBa₂Cu₃O_y ( 120 960) films. The number in parenthesis refers to the thickness of each layer in units of Angstrom. The bias voltage of the tip was kept negative and was varied from -600 to -1200 mV. The tip was operated in a constant tunneling mode with 0.3 - 0.6 nA of tunneling current and the scanning rate was 1 Hz. Etching of the YBCO PBCO ( 120 960) begins with a nucleation of holes and can be achieved by successive scanning a fixed area.

原文	英語
頁（從 - 到）	391-392
頁數	2
期刊	Physica B: Physics of Condensed Matter
卷	194-196
發行號	PART 1
DOIs	https://doi.org/10.1016/0921-4526(94)90525-8
出版狀態	已發佈 - 1994 2月 2

ASJC Scopus subject areas

電子、光磁材料
凝聚態物理學
電氣與電子工程

存取文件

10.1016/0921-4526(94)90525-8

其它文件與鏈接

引用此

@article{3e1f5b46906942aabdce36e333830fba,

title = "Etching of YBa2Cu3Oy surface by scanning tunneling microscope",

abstract = "We report the controlled and systematic modification with scanning tunneling microscope (STM) of the surface in bilayer YBa2Cu3Oy PrBa2Cu3Oy ( 120 960) films. The number in parenthesis refers to the thickness of each layer in units of Angstrom. The bias voltage of the tip was kept negative and was varied from -600 to -1200 mV. The tip was operated in a constant tunneling mode with 0.3 - 0.6 nA of tunneling current and the scanning rate was 1 Hz. Etching of the YBCO PBCO ( 120 960) begins with a nucleation of holes and can be achieved by successive scanning a fixed area.",

author = "S. Chen and Wang, {L. M.} and Yang, {H. C.} and Horng, {H. E.}",

year = "1994",

month = feb,

day = "2",

doi = "10.1016/0921-4526(94)90525-8",

language = "English",

volume = "194-196",

pages = "391--392",

journal = "Physica B: Physics of Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

number = "PART 1",

}

TY - JOUR

T1 - Etching of YBa2Cu3Oy surface by scanning tunneling microscope

AU - Chen, S.

AU - Wang, L. M.

AU - Yang, H. C.

AU - Horng, H. E.

PY - 1994/2/2

Y1 - 1994/2/2

N2 - We report the controlled and systematic modification with scanning tunneling microscope (STM) of the surface in bilayer YBa2Cu3Oy PrBa2Cu3Oy ( 120 960) films. The number in parenthesis refers to the thickness of each layer in units of Angstrom. The bias voltage of the tip was kept negative and was varied from -600 to -1200 mV. The tip was operated in a constant tunneling mode with 0.3 - 0.6 nA of tunneling current and the scanning rate was 1 Hz. Etching of the YBCO PBCO ( 120 960) begins with a nucleation of holes and can be achieved by successive scanning a fixed area.

AB - We report the controlled and systematic modification with scanning tunneling microscope (STM) of the surface in bilayer YBa2Cu3Oy PrBa2Cu3Oy ( 120 960) films. The number in parenthesis refers to the thickness of each layer in units of Angstrom. The bias voltage of the tip was kept negative and was varied from -600 to -1200 mV. The tip was operated in a constant tunneling mode with 0.3 - 0.6 nA of tunneling current and the scanning rate was 1 Hz. Etching of the YBCO PBCO ( 120 960) begins with a nucleation of holes and can be achieved by successive scanning a fixed area.

UR - http://www.scopus.com/inward/record.url?scp=0028759425&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028759425&partnerID=8YFLogxK

U2 - 10.1016/0921-4526(94)90525-8

DO - 10.1016/0921-4526(94)90525-8

M3 - Article

AN - SCOPUS:0028759425

SN - 0921-4526

VL - 194-196

SP - 391

EP - 392

JO - Physica B: Physics of Condensed Matter

JF - Physica B: Physics of Condensed Matter

IS - PART 1

ER -

Etching of YBa2Cu3Oy surface by scanning tunneling microscope

摘要

ASJC Scopus subject areas

存取文件

其它文件與鏈接

指紋

引用此

Etching of YBa₂Cu₃O_y surface by scanning tunneling microscope