Etching of YBa2Cu3Oy surface by scanning tunneling microscope

S. Chen*, L. M. Wang, H. C. Yang, H. E. Horng

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

摘要

We report the controlled and systematic modification with scanning tunneling microscope (STM) of the surface in bilayer YBa2Cu3Oy PrBa2Cu3Oy ( 120 960) films. The number in parenthesis refers to the thickness of each layer in units of Angstrom. The bias voltage of the tip was kept negative and was varied from -600 to -1200 mV. The tip was operated in a constant tunneling mode with 0.3 - 0.6 nA of tunneling current and the scanning rate was 1 Hz. Etching of the YBCO PBCO ( 120 960) begins with a nucleation of holes and can be achieved by successive scanning a fixed area.

原文英語
頁(從 - 到)391-392
頁數2
期刊Physica B: Physics of Condensed Matter
194-196
發行號PART 1
DOIs
出版狀態已發佈 - 1994 2月 2
對外發佈

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程

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