TY - JOUR
T1 - Estimating the junction temperature of InGaN and AlGaInP light-emitting diodes
AU - Lee, Ya Ju
AU - Lee, Chia Jung
AU - Chen, Chih Hao
N1 - Funding Information:
The authors thank staff at the Public Technology Service Centre, XTBG-CAS, for their assistance in using the HPC Platform. The authors thank Maria Servedio, Carole Smadja, Stuart Baird, and anonymous referees for their excellent suggestions. This work was supported by grants from National Key Research and Development Program (2017YFC0505203), National Natural Science Foundation of China (grant numbers 31590821, 31670665, 91731301), National Key Project for Basic Research (2014CB954100), “1000 Youth Talents Plan” of Yunnan Province and CAS “Light of West China” Program. The authors declare no conflict of interest.
PY - 2011/4
Y1 - 2011/4
N2 - The junction temperature of light-emitting diodes (LEDs) directly and significantly affects LEDs performances. Thus, accurate measurement and precise estimation of LEDs junction temperature become extremely important. In this study, we analyze the physical foundation of temperaturedependent electrical characteristics and develop a new scheme to directly express the dependence of junction temperature on injected current for InGaN and AlGaInP LEDs. From a more general viewpoint, our scheme for the estimation of junction temperature is primarily based on the LEDs external properties, and therefore can be applied to other kinds of III-V compound-based semiconductor LEDs.
AB - The junction temperature of light-emitting diodes (LEDs) directly and significantly affects LEDs performances. Thus, accurate measurement and precise estimation of LEDs junction temperature become extremely important. In this study, we analyze the physical foundation of temperaturedependent electrical characteristics and develop a new scheme to directly express the dependence of junction temperature on injected current for InGaN and AlGaInP LEDs. From a more general viewpoint, our scheme for the estimation of junction temperature is primarily based on the LEDs external properties, and therefore can be applied to other kinds of III-V compound-based semiconductor LEDs.
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U2 - 10.1143/JJAP.50.04DG18
DO - 10.1143/JJAP.50.04DG18
M3 - Article
AN - SCOPUS:79955441778
SN - 0021-4922
VL - 50
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 4 PART 2
M1 - 04DG18
ER -