TY - JOUR
T1 - ESD Research of SCR Devices under Harsh Environments
AU - Lin, Chien Chun
AU - Lin, Chun Yu
N1 - Publisher Copyright:
© 2023 by the authors.
PY - 2023/9
Y1 - 2023/9
N2 - In prior technology, system-level electrostatic discharge (ESD) tests under environment change conditions mainly focused on testing the effect of a high-temperature environment. i.e., the effect on internal circuits of heat generated outside. However, few studies have explored the effect of ambient relative humidity changes on integrated circuits (ICs). Therefore, this study will analyze the performance of various ESD protection components under high ambient temperature and high ambient relative humidity. The ESD protection devices are tested for the ESD robustness of the silicon-controlled rectifiers (SCR) under a harsh environment and the measurement results are discussed and verified in the CMOS process.
AB - In prior technology, system-level electrostatic discharge (ESD) tests under environment change conditions mainly focused on testing the effect of a high-temperature environment. i.e., the effect on internal circuits of heat generated outside. However, few studies have explored the effect of ambient relative humidity changes on integrated circuits (ICs). Therefore, this study will analyze the performance of various ESD protection components under high ambient temperature and high ambient relative humidity. The ESD protection devices are tested for the ESD robustness of the silicon-controlled rectifiers (SCR) under a harsh environment and the measurement results are discussed and verified in the CMOS process.
KW - electrostatic discharge
KW - relative humidity (RH)
KW - silicon-controlled rectifiers
UR - http://www.scopus.com/inward/record.url?scp=85173007449&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85173007449&partnerID=8YFLogxK
U2 - 10.3390/ma16186182
DO - 10.3390/ma16186182
M3 - Article
AN - SCOPUS:85173007449
SN - 1996-1944
VL - 16
JO - Materials
JF - Materials
IS - 18
M1 - 6182
ER -