ESD protection structure with inductor-triggered SCR for RF applications in 65-nm CMOS process

Chun Yu Lin*, Li Wei Chu, Ming Dou Ker, Ming Hsiang Song, Chewn Pu Jou, Tse Hua Lu, Jen Chou Tseng, Ming Hsien Tsai, Tsun Lai Hsu, Ping Fang Hung, Tzu Heng Chang

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

5 引文 斯高帕斯(Scopus)

摘要

To protect radio-frequency (RF) integrated circuits from electrostatic discharge (ESD) damages, silicon-controlled rectifier (SCR) devices have been used as main on-chip ESD protection devices due to their high ESD robustness and low parasitic capacitance in nanoscale CMOS technologies. In this work, the SCR device assisted with an inductor to resonate at the selected frequency band for RF performance fine tune was proposed. Besides, the inductor can be also designed to improve the turn-on efficiency of the SCR device for ESD protection. Verified in a 65-nm CMOS process, the ESD protection design with the inductor-triggered SCR for 60-GHz RF applications can achieve good RF performances and high ESD robustness.

原文英語
主出版物標題2012 IEEE International Reliability Physics Symposium, IRPS 2012
頁面EL.3.1-EL.3.5
DOIs
出版狀態已發佈 - 2012 九月 28
事件2012 IEEE International Reliability Physics Symposium, IRPS 2012 - Anaheim, CA, 美国
持續時間: 2012 四月 152012 四月 19

出版系列

名字IEEE International Reliability Physics Symposium Proceedings
ISSN(列印)1541-7026

其他

其他2012 IEEE International Reliability Physics Symposium, IRPS 2012
國家/地區美国
城市Anaheim, CA
期間2012/04/152012/04/19

ASJC Scopus subject areas

  • 工程 (全部)

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