ESD protection design for wideband RF applications in 65-nm CMOS process

Li Wei Chu; Chun Yu Lin; Ming Dou Ker; Ming Hsiang Song; Jen Chou Tseng; Chewn Pu Jou; Ming Hsien Tsai

doi:10.1109/ISCAS.2014.6865426

ESD protection design for wideband RF applications in 65-nm CMOS process

Li Wei Chu, Chun Yu Lin, Ming Dou Ker, Ming Hsiang Song, Jen Chou Tseng, Chewn Pu Jou, Ming Hsien Tsai

電機工程學系

研究成果: 書貢獻/報告類型 › 會議論文篇章

1 引文斯高帕斯（Scopus）

摘要

All wireless communication products must meet the reliability specifications during mass production. To prevent from electrostatic discharge (ESD) damages, the ESD protection designs must be added at all input/output pads in chip. Some ESD protection designs with low parasitic capacitance for radio-frequency (RF) applications are reviewed in this paper. Besides, a novel ESD protection design is proposed and realized in a 65nm CMOS process to protect the wideband RF circuits. In this work, diodes are used for ESD protection and inductors are used for high-frequency performance fine tuning. Experimental results of the test circuits have been successfully verified.

原文	英語
主出版物標題	2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	1480-1483
頁數	4
ISBN（列印）	9781479934324
DOIs	https://doi.org/10.1109/ISCAS.2014.6865426
出版狀態	已發佈 - 2014
事件	2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 - Melbourne, VIC, 澳大利亚持續時間: 2014 6月 1 → 2014 6月 5

出版系列

名字	Proceedings - IEEE International Symposium on Circuits and Systems
ISSN（列印）	0271-4310

其他

其他	2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
國家/地區	澳大利亚
城市	Melbourne, VIC
期間	2014/06/01 → 2014/06/05

ASJC Scopus subject areas

電氣與電子工程

存取文件

10.1109/ISCAS.2014.6865426

其它文件與鏈接

引用此

Chu, L. W., Lin, C. Y., Ker, M. D., Song, M. H., Tseng, J. C., Jou, C. P., & Tsai, M. H. (2014). ESD protection design for wideband RF applications in 65-nm CMOS process. 於 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 (頁 1480-1483). 文章 6865426 (Proceedings - IEEE International Symposium on Circuits and Systems). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCAS.2014.6865426

ESD protection design for wideband RF applications in 65-nm CMOS process. / Chu, Li Wei; Lin, Chun Yu; Ker, Ming Dou 等.
2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 1480-1483 6865426 (Proceedings - IEEE International Symposium on Circuits and Systems).

研究成果: 書貢獻/報告類型 › 會議論文篇章

Chu, LW, Lin, CY, Ker, MD, Song, MH, Tseng, JC, Jou, CP & Tsai, MH 2014, ESD protection design for wideband RF applications in 65-nm CMOS process. 於 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014., 6865426, Proceedings - IEEE International Symposium on Circuits and Systems, Institute of Electrical and Electronics Engineers Inc., 頁 1480-1483, 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014, Melbourne, VIC, 澳大利亚, 2014/06/01. https://doi.org/10.1109/ISCAS.2014.6865426

Chu LW, Lin CY, Ker MD, Song MH, Tseng JC, Jou CP 等. ESD protection design for wideband RF applications in 65-nm CMOS process. 於 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 1480-1483. 6865426. (Proceedings - IEEE International Symposium on Circuits and Systems). doi: 10.1109/ISCAS.2014.6865426

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title = "ESD protection design for wideband RF applications in 65-nm CMOS process",

abstract = "All wireless communication products must meet the reliability specifications during mass production. To prevent from electrostatic discharge (ESD) damages, the ESD protection designs must be added at all input/output pads in chip. Some ESD protection designs with low parasitic capacitance for radio-frequency (RF) applications are reviewed in this paper. Besides, a novel ESD protection design is proposed and realized in a 65nm CMOS process to protect the wideband RF circuits. In this work, diodes are used for ESD protection and inductors are used for high-frequency performance fine tuning. Experimental results of the test circuits have been successfully verified.",

keywords = "Diode, ESD, T-coil, radio-frequency (RF), wideband",

author = "Chu, {Li Wei} and Lin, {Chun Yu} and Ker, {Ming Dou} and Song, {Ming Hsiang} and Tseng, {Jen Chou} and Jou, {Chewn Pu} and Tsai, {Ming Hsien}",

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AU - Jou, Chewn Pu

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AB - All wireless communication products must meet the reliability specifications during mass production. To prevent from electrostatic discharge (ESD) damages, the ESD protection designs must be added at all input/output pads in chip. Some ESD protection designs with low parasitic capacitance for radio-frequency (RF) applications are reviewed in this paper. Besides, a novel ESD protection design is proposed and realized in a 65nm CMOS process to protect the wideband RF circuits. In this work, diodes are used for ESD protection and inductors are used for high-frequency performance fine tuning. Experimental results of the test circuits have been successfully verified.

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ESD protection design for wideband RF applications in 65-nm CMOS process

摘要

出版系列

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ASJC Scopus subject areas

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