ESD protection design for wideband RF applications in 65-nm CMOS process

Li Wei Chu, Chun Yu Lin, Ming Dou Ker, Ming Hsiang Song, Jen Chou Tseng, Chewn Pu Jou, Ming Hsien Tsai

研究成果: 書貢獻/報告類型會議論文篇章

1 引文 斯高帕斯(Scopus)

摘要

All wireless communication products must meet the reliability specifications during mass production. To prevent from electrostatic discharge (ESD) damages, the ESD protection designs must be added at all input/output pads in chip. Some ESD protection designs with low parasitic capacitance for radio-frequency (RF) applications are reviewed in this paper. Besides, a novel ESD protection design is proposed and realized in a 65nm CMOS process to protect the wideband RF circuits. In this work, diodes are used for ESD protection and inductors are used for high-frequency performance fine tuning. Experimental results of the test circuits have been successfully verified.

原文英語
主出版物標題2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1480-1483
頁數4
ISBN(列印)9781479934324
DOIs
出版狀態已發佈 - 2014
事件2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 - Melbourne, VIC, 澳大利亚
持續時間: 2014 六月 12014 六月 5

出版系列

名字Proceedings - IEEE International Symposium on Circuits and Systems
ISSN(列印)0271-4310

其他

其他2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
國家/地區澳大利亚
城市Melbourne, VIC
期間2014/06/012014/06/05

ASJC Scopus subject areas

  • 電氣與電子工程

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