ESD protection design for radio-frequency integrated circuits in nanoscale CMOS technology

Chun Yu Lin, Li Wei Chu, Shiang Yu Tsai, Ming Dou Ker, Ming Hsiang Song, Chewn Pu Jou, Tse Hua Lu, Jen Chou Tseng, Ming Hsien Tsai, Tsun Lai Hsu, Ping Fang Hung, Yu Lin Wei, Tzu Heng Chang

研究成果: 書貢獻/報告類型會議貢獻

摘要

Nanoscale CMOS technologies have been used to implement the radio-frequency integrated circuits. However, the thinner gate oxide in nanoscale CMOS technology seriously degrades the electrostatic discharge (ESD) robustness of IC products. Therefore, on-chip ESD protection designs must be added at all input/output pads in CMOS chip. To minimize the impacts from ESD protection on circuit performances, ESD protection at input/output pads must be carefully designed. In this work, a new proposed ESD protection design has been realized in a nanoscale CMOS process. Experimental results of the test circuits have been successfully verified, including RF performances, I-V characteristics, and ESD robustness.

原文英語
主出版物標題2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
頁面241-244
頁數4
DOIs
出版狀態已發佈 - 2013 十二月 1
事件2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 - Beijing, 中国
持續時間: 2013 八月 52013 八月 8

出版系列

名字Proceedings of the IEEE Conference on Nanotechnology
ISSN(列印)1944-9399
ISSN(電子)1944-9380

其他

其他2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
國家中国
城市Beijing
期間13/8/513/8/8

    指紋

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

引用此

Lin, C. Y., Chu, L. W., Tsai, S. Y., Ker, M. D., Song, M. H., Jou, C. P., Lu, T. H., Tseng, J. C., Tsai, M. H., Hsu, T. L., Hung, P. F., Wei, Y. L., & Chang, T. H. (2013). ESD protection design for radio-frequency integrated circuits in nanoscale CMOS technology. 於 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 (頁 241-244). [6720810] (Proceedings of the IEEE Conference on Nanotechnology). https://doi.org/10.1109/NANO.2013.6720810