TY - JOUR
T1 - ESD Protection Design for Open-Drain Power Amplifier in CMOS Technology
AU - Lin, Chun Yu
AU - Li, Guan Yi
N1 - Funding Information:
Manuscript received August 22, 2019; revised October 16, 2019; accepted November 4, 2019. Date of publication November 6, 2019; date of current version December 18, 2019. This work was supported by the Ministry of Science and Technology (MOST), Taiwan, under Contract MOST 108-2221-E-003-018. (Corresponding author: Chun-Yu Lin.) The authors are with the Department of Electrical Engineering, National Taiwan Normal University, Taipei 106, Taiwan (e-mail: cy.lin@ieee.org).
Funding Information:
ACKNOWLEDGMENT The authors would like to thank Taiwan Semiconductor Research Institute (TSRI), Taiwan, for the support of chip fabrication, Hanwa Electronic Ind. Co., Ltd., Japan, for setting up the ESD tester, and Prof. M.-D. Ker and his research group in National Chiao Tung University, Taiwan, for their help during measurement.
Publisher Copyright:
© 2001-2011 IEEE.
PY - 2019/12
Y1 - 2019/12
N2 - The on-chip electrostatic discharge (ESD) protection device for radio-frequency (RF) power amplifier (PA) with open-drain structure is studied in this work. The conventional ESD protection device of stacked diodes and the proposed ESD protection device of stacked diodes with embedded silicon-controlled rectifiers (SCRs) are compared in silicon and applied to the 2.4GHz PAs. The proposed ESD protection device has the advantages including higher ESD-current-handling ability, lower ESD-clamping voltage, and sufficiently low parasitic capacitance. Besides, the proposed ESD protection device does not degrade the PA performances. Therefore, the proposed ESD protection device of stacked diodes with embedded SCRs is more suitable for CMOS PAs.
AB - The on-chip electrostatic discharge (ESD) protection device for radio-frequency (RF) power amplifier (PA) with open-drain structure is studied in this work. The conventional ESD protection device of stacked diodes and the proposed ESD protection device of stacked diodes with embedded silicon-controlled rectifiers (SCRs) are compared in silicon and applied to the 2.4GHz PAs. The proposed ESD protection device has the advantages including higher ESD-current-handling ability, lower ESD-clamping voltage, and sufficiently low parasitic capacitance. Besides, the proposed ESD protection device does not degrade the PA performances. Therefore, the proposed ESD protection device of stacked diodes with embedded SCRs is more suitable for CMOS PAs.
KW - Electrostatic discharge (ESD)
KW - diodes
KW - open-drain
KW - power amplifier (PA)
KW - silicon-controlled rectifier (SCR)
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U2 - 10.1109/TDMR.2019.2951939
DO - 10.1109/TDMR.2019.2951939
M3 - Article
AN - SCOPUS:85077093281
SN - 1530-4388
VL - 19
SP - 782
EP - 790
JO - IEEE Transactions on Device and Materials Reliability
JF - IEEE Transactions on Device and Materials Reliability
IS - 4
M1 - 8892659
ER -