ESD Protection Design for Open-Drain Power Amplifier in CMOS Technology

Chun Yu Lin, Guan Yi Li

研究成果: 雜誌貢獻文章

摘要

The on-chip electrostatic discharge (ESD) protection device for radio-frequency (RF) power amplifier (PA) with open-drain structure is studied in this work. The conventional ESD protection device of stacked diodes and the proposed ESD protection device of stacked diodes with embedded silicon-controlled rectifiers (SCRs) are compared in silicon and applied to the 2.4GHz PAs. The proposed ESD protection device has the advantages including higher ESD-current-handling ability, lower ESD-clamping voltage, and sufficiently low parasitic capacitance. Besides, the proposed ESD protection device does not degrade the PA performances. Therefore, the proposed ESD protection device of stacked diodes with embedded SCRs is more suitable for CMOS PAs.

原文英語
文章編號8892659
頁(從 - 到)782-790
頁數9
期刊IEEE Transactions on Device and Materials Reliability
19
發行號4
DOIs
出版狀態已發佈 - 2019 十二月
對外發佈Yes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

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