TY - GEN
T1 - ESD protection design for gigahertz differential LNA in a 65-nm CMOS process
AU - Lin, Chun Yu
AU - Fan, Mei Lian
AU - Fu, Wei Hao
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/8/3
Y1 - 2015/8/3
N2 - The electrostatic discharge (ESD) immunity test for EMC was one important reliability regulation. The turn-on-efficient on-chip ESD protection circuit is required to clamp the overstress voltage. A new design of ESD protection diodes with embedded silicon-controlled rectifier (SCR) was proposed to protect the gigahertz differential low-noise amplifier (LNA). Experimental results had shown that the proposed ESD protection design for the differential LNA can achieve excellent ESD robustness and good RF performances.
AB - The electrostatic discharge (ESD) immunity test for EMC was one important reliability regulation. The turn-on-efficient on-chip ESD protection circuit is required to clamp the overstress voltage. A new design of ESD protection diodes with embedded silicon-controlled rectifier (SCR) was proposed to protect the gigahertz differential low-noise amplifier (LNA). Experimental results had shown that the proposed ESD protection design for the differential LNA can achieve excellent ESD robustness and good RF performances.
UR - http://www.scopus.com/inward/record.url?scp=84964031664&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84964031664&partnerID=8YFLogxK
U2 - 10.1109/APEMC.2015.7175245
DO - 10.1109/APEMC.2015.7175245
M3 - Conference contribution
AN - SCOPUS:84964031664
T3 - 2015 Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2015
SP - 322
EP - 324
BT - 2015 Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2015
Y2 - 25 May 2015 through 29 May 2015
ER -