ESD protection design for gigahertz differential LNA in a 65-nm CMOS process

Chun-Yu Lin, Mei Lian Fan, Wei Hao Fu

研究成果: 書貢獻/報告類型會議貢獻

摘要

The electrostatic discharge (ESD) immunity test for EMC was one important reliability regulation. The turn-on-efficient on-chip ESD protection circuit is required to clamp the overstress voltage. A new design of ESD protection diodes with embedded silicon-controlled rectifier (SCR) was proposed to protect the gigahertz differential low-noise amplifier (LNA). Experimental results had shown that the proposed ESD protection design for the differential LNA can achieve excellent ESD robustness and good RF performances.

原文英語
主出版物標題2015 Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2015
發行者Institute of Electrical and Electronics Engineers Inc.
頁面322-324
頁數3
ISBN(電子)9781479966707
DOIs
出版狀態已發佈 - 2015 八月 3
事件Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2015 - Taipei, 臺灣
持續時間: 2015 五月 252015 五月 29

其他

其他Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2015
國家臺灣
城市Taipei
期間15/5/2515/5/29

指紋

Differential amplifiers
Electrostatic discharge
Low noise amplifiers
low noise
CMOS
amplifiers
electrostatics
circuit protection
silicon controlled rectifiers
clamps
Clamping devices
immunity
Electromagnetic compatibility
Thyristors
Diodes
diodes
chips
Networks (circuits)
Electric potential
electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation

引用此文

Lin, C-Y., Fan, M. L., & Fu, W. H. (2015). ESD protection design for gigahertz differential LNA in a 65-nm CMOS process. 於 2015 Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2015 (頁 322-324). [7175245] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APEMC.2015.7175245

ESD protection design for gigahertz differential LNA in a 65-nm CMOS process. / Lin, Chun-Yu; Fan, Mei Lian; Fu, Wei Hao.

2015 Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 322-324 7175245.

研究成果: 書貢獻/報告類型會議貢獻

Lin, C-Y, Fan, ML & Fu, WH 2015, ESD protection design for gigahertz differential LNA in a 65-nm CMOS process. 於 2015 Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2015., 7175245, Institute of Electrical and Electronics Engineers Inc., 頁 322-324, Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2015, Taipei, 臺灣, 15/5/25. https://doi.org/10.1109/APEMC.2015.7175245
Lin C-Y, Fan ML, Fu WH. ESD protection design for gigahertz differential LNA in a 65-nm CMOS process. 於 2015 Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 322-324. 7175245 https://doi.org/10.1109/APEMC.2015.7175245
Lin, Chun-Yu ; Fan, Mei Lian ; Fu, Wei Hao. / ESD protection design for gigahertz differential LNA in a 65-nm CMOS process. 2015 Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 頁 322-324
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