ESD protection design for gigahertz differential LNA in a 65-nm CMOS process

Chun-Yu Lin, Mei Lian Fan, Wei Hao Fu

研究成果: 書貢獻/報告類型會議貢獻

摘要

The electrostatic discharge (ESD) immunity test for EMC was one important reliability regulation. The turn-on-efficient on-chip ESD protection circuit is required to clamp the overstress voltage. A new design of ESD protection diodes with embedded silicon-controlled rectifier (SCR) was proposed to protect the gigahertz differential low-noise amplifier (LNA). Experimental results had shown that the proposed ESD protection design for the differential LNA can achieve excellent ESD robustness and good RF performances.

原文英語
主出版物標題2015 Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2015
發行者Institute of Electrical and Electronics Engineers Inc.
頁面322-324
頁數3
ISBN(電子)9781479966707
DOIs
出版狀態已發佈 - 2015 八月 3
事件Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2015 - Taipei, 臺灣
持續時間: 2015 五月 252015 五月 29

其他

其他Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2015
國家臺灣
城市Taipei
期間15/5/2515/5/29

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation

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  • 引用此

    Lin, C-Y., Fan, M. L., & Fu, W. H. (2015). ESD protection design for gigahertz differential LNA in a 65-nm CMOS process. 於 2015 Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2015 (頁 322-324). [7175245] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APEMC.2015.7175245