Epitaxial growth and interfacial magnetism of spin aligner for remanent spin injection: [Fe/Tb]n /Fe/MgO/GaAs -light emitting diode as a prototype system

E. Schuster*, R. A. Brand, F. Stromberg, F. Y. Lo, A. Ludwig, D. Reuter, A. D. Wieck, S. Hövel, N. C. Gerhardt, M. R. Hofmann, H. Wende, W. Keune

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

16 引文 斯高帕斯(Scopus)

摘要

We have successfully grown and characterized [Fe/Tb]10 /Fe (001) / 57Fe (001) /MgO (001) multilayer contacts on a GaAs-based light emitting diode. Using 57Fe conversion-electron Mössbauer spectroscopy at room temperature (RT) and at 4.2 K, we provide atomistic proof of large perpendicular Fe spin components in zero external field at and below RT at the 57Fe (001) /MgO (001) interface. Further, indirect evidence of large interfacial Fe atomic moments is provided. Our contacts serve as a prototype spin aligner for remanent electrical spin injection at RT.

原文英語
文章編號063902
期刊Journal of Applied Physics
108
發行號6
DOIs
出版狀態已發佈 - 2010 9月 15
對外發佈

ASJC Scopus subject areas

  • 一般物理與天文學

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