Environment-insensitive and gate-controllable photocurrent enabled by bandgap engineering of MoS2 junctions

Fu Yu Shih, Yueh Chun Wu, Yi Siang Shih, Ming Chiuan Shih, Tsuei Shin Wu, Po Hsun Ho, Chun Wei Chen, Yang Fang Chen, Ya Ping Chiu, Wei Hua Wang

研究成果: 雜誌貢獻文章

6 引文 斯高帕斯(Scopus)

摘要

Two-dimensional (2D) materials are composed of atomically thin crystals with an enormous surface-to-volume ratio, and their physical properties can be easily subjected to the change of the chemical environment. Encapsulation with other layered materials, such as hexagonal boron nitride, is a common practice; however, this approach often requires inextricable fabrication processes. Alternatively, it is intriguing to explore methods to control transport properties in the circumstance of no encapsulated layer. This is very challenging because of the ubiquitous presence of adsorbents, which can lead to charged-impurity scattering sites, charge traps, and recombination centers. Here, we show that the short-circuit photocurrent originated from the built-in electric field at the MoS2 junction is surprisingly insensitive to the gaseous environment over the range from a vacuum of 1 × 10-6 Torr to ambient condition. The environmental insensitivity of the short-circuit photocurrent is attributed to the characteristic of the diffusion current that is associated with the gradient of carrier density. Conversely, the photocurrent with bias exhibits typical persistent photoconductivity and greatly depends on the gaseous environment. The observation of environment-insensitive short-circuit photocurrent demonstrates an alternative method to design device structure for 2D-material-based optoelectronic applications.

原文英語
文章編號44768
期刊Scientific reports
7
DOIs
出版狀態已發佈 - 2017 三月 21

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    Shih, F. Y., Wu, Y. C., Shih, Y. S., Shih, M. C., Wu, T. S., Ho, P. H., Chen, C. W., Chen, Y. F., Chiu, Y. P., & Wang, W. H. (2017). Environment-insensitive and gate-controllable photocurrent enabled by bandgap engineering of MoS2 junctions. Scientific reports, 7, [44768]. https://doi.org/10.1038/srep44768