Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates

Y. J. Lee, J. M. Hwang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee, T. C. Lu, H. C. Kuo, S. C. Wang

研究成果: 雜誌貢獻文章

218 引文 斯高帕斯(Scopus)

摘要

GaN-based light-emitting diodes (LEDs) with emitting wavelength of 450 nm were grown on patterned sapphire substrates (PSSs) fabricated by chemical wet etching. The crystallography-etched facet was {1-102} R-plane with a 57° against {0001} C-axis and had superior capability for enhancing light extraction efficiency. The light output power of the PSS LED was 1.15 times higher than that of the conventional LED at an injection current of 20 mA. The output power and external quantum efficiency were estimated to be 9 mW and 16.4%, respectively. The improvement was attributed not only to geometrical shapes of {1-102} crystallography-etched facets that efficiently scatter the guided light to find escape cones, but also to dislocation density reduction by adopting the PSS growth scheme.

原文英語
頁(從 - 到)1152-1154
頁數3
期刊IEEE Photonics Technology Letters
18
發行號10
DOIs
出版狀態已發佈 - 2006 五月 15

    指紋

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

引用此

Lee, Y. J., Hwang, J. M., Hsu, T. C., Hsieh, M. H., Jou, M. J., Lee, B. J., Lu, T. C., Kuo, H. C., & Wang, S. C. (2006). Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates. IEEE Photonics Technology Letters, 18(10), 1152-1154. https://doi.org/10.1109/LPT.2006.874737