TY - JOUR
T1 - Enhancement of the direct optical transition in nanocrystallized GaAsN alloys
AU - Gwo, S.
AU - Huang, S. Y.
AU - Yang, T. R.
PY - 2001/9/15
Y1 - 2001/9/15
N2 - Using x-ray diffraction, cross-sectional transmission electron microscopy (XTEM), and infrared absorption techniques, we have investigated the effects of nanocrystallization on the structural and optical properties of GaAs0.99N0.01 grown by plasma-enhanced molecular-beam epitaxy. The x-ray diffraction results of postgrowth annealed samples with a protective Si3N4 cap exhibit significant lattice relaxation, structural inhomogeneity, and apparent nitrogen "loss," indicating the occurrence of phase separation after thermal treatment. High-resolution XTEM confirms the formation of N-enriched GaAsN nanocrystals embedded at the GaAsN/Si3N4 interface. Infrared absorption study demonstrates that the annealed sample has a strongly enhanced direct optical transition.
AB - Using x-ray diffraction, cross-sectional transmission electron microscopy (XTEM), and infrared absorption techniques, we have investigated the effects of nanocrystallization on the structural and optical properties of GaAs0.99N0.01 grown by plasma-enhanced molecular-beam epitaxy. The x-ray diffraction results of postgrowth annealed samples with a protective Si3N4 cap exhibit significant lattice relaxation, structural inhomogeneity, and apparent nitrogen "loss," indicating the occurrence of phase separation after thermal treatment. High-resolution XTEM confirms the formation of N-enriched GaAsN nanocrystals embedded at the GaAsN/Si3N4 interface. Infrared absorption study demonstrates that the annealed sample has a strongly enhanced direct optical transition.
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U2 - 10.1103/physrevb.64.113312
DO - 10.1103/physrevb.64.113312
M3 - Article
AN - SCOPUS:0035884473
SN - 0163-1829
VL - 64
SP - 1133121
EP - 1133124
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 11
M1 - 113312
ER -