Enhancement of the direct optical transition in nanocrystallized GaAsN alloys

S. Gwo, S. Y. Huang, T. R. Yang

研究成果: 雜誌貢獻期刊論文同行評審

8 引文 斯高帕斯(Scopus)

摘要

Using x-ray diffraction, cross-sectional transmission electron microscopy (XTEM), and infrared absorption techniques, we have investigated the effects of nanocrystallization on the structural and optical properties of GaAs0.99N0.01 grown by plasma-enhanced molecular-beam epitaxy. The x-ray diffraction results of postgrowth annealed samples with a protective Si3N4 cap exhibit significant lattice relaxation, structural inhomogeneity, and apparent nitrogen "loss," indicating the occurrence of phase separation after thermal treatment. High-resolution XTEM confirms the formation of N-enriched GaAsN nanocrystals embedded at the GaAsN/Si3N4 interface. Infrared absorption study demonstrates that the annealed sample has a strongly enhanced direct optical transition.

原文英語
文章編號113312
頁(從 - 到)1133121-1133124
頁數4
期刊Physical Review B - Condensed Matter and Materials Physics
64
發行號11
DOIs
出版狀態已發佈 - 2001 九月 15

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學

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