Using x-ray diffraction, cross-sectional transmission electron microscopy (XTEM), and infrared absorption techniques, we have investigated the effects of nanocrystallization on the structural and optical properties of GaAs0.99N0.01 grown by plasma-enhanced molecular-beam epitaxy. The x-ray diffraction results of postgrowth annealed samples with a protective Si3N4 cap exhibit significant lattice relaxation, structural inhomogeneity, and apparent nitrogen "loss," indicating the occurrence of phase separation after thermal treatment. High-resolution XTEM confirms the formation of N-enriched GaAsN nanocrystals embedded at the GaAsN/Si3N4 interface. Infrared absorption study demonstrates that the annealed sample has a strongly enhanced direct optical transition.
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|Physical Review B - Condensed Matter and Materials Physics
|已發佈 - 2001 9月 15
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