Enhancement of magnetoresistance in Co(1100)/Cr(211) bilayered films on MaO(110)

Y. D. Yao*, Y. Liou, J. C.A. Huang, S. Y. Liao, I. Klik, W. T. Yang, C. P. Chang, C. K. Lo

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

13 引文 斯高帕斯(Scopus)

摘要

Epitaxial Co/Cr bilayered films have been successfully grown on the MgO(100) and MgO(110) substrates by molecular-beam epitaxy. According to the reflection high-energy electron-diffraction and x-ray-diffraction measurements the crystal structure of the film depends on orientation of the buffer and substrate. Epitaxial growth of biaxial Co(1120)/Cr(100) on MgO(100) substrate and of uniaxial Co(1100)/Cr(211) on MgO(110) substrate has been confirmed. The anisotropy magnetoresistance (AMR) is strongly influenced by the orientation of the Cr buffer. In Co(1120)/Cr(100) on MgO(100) AMR is isotropic for all in-plane fields. However, for Co(1100)/Cr(211) on MgO(110) we observed enhancement of AMR along the easy axis for temperatures below 150 K, while along the hard axis AMR has a local maximum at about 150 K. The easy axis data suggest that the longitudinal spin density wave of Cr and the crystal anisotropy of Co on Cr(211) plane dominate the enhancement of the AMR.

原文英語
頁(從 - 到)6533-6535
頁數3
期刊Journal of Applied Physics
79
發行號8 PART 2B
DOIs
出版狀態已發佈 - 1996 4月 15
對外發佈

ASJC Scopus subject areas

  • 一般物理與天文學

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