@inproceedings{85b9cadbcc11400c8c9c174be8996cea,
title = "Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiNx/HfO2 passivation layers",
abstract = "In this letter, we report enhanced gate-bias and current stress stability of p-type SnO thin-film transistors passivated with SiNx/HfO2 layers. The improvement is primarily attributed to the effective suppression of bias-induced adsorption of oxygen molecules on the back-channel surface by the presence of passivation layers. Under the gate-bias stress of 10 V and -10 V for 10000 s, the threshold voltage shifts for the passivated TFT are 0.75 V and -0.42 V respectively, while the corresponding values for the unpassivated one are 1.24 V and -0.77 V Under the current stress of 2.5 μA for 10000 s, the threshold voltage shift is -0.29 V for the passivated TFT and -0.63 V for the unpassivated one.",
author = "Hsu, {Shu Ming} and Li, {Yun Shiuan} and Tu, {Min Sheng} and He, {Jyun Ci} and Chiu, {I. Chung} and Chen, {Pin Guang} and Lee, {Min Hung} and Chen, {Jian Zhang} and Cheng, {I. Chun}",
note = "Publisher Copyright: {\textcopyright} 2016 FTFMD.; 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016 ; Conference date: 06-07-2016 Through 08-07-2016",
year = "2016",
month = aug,
day = "15",
doi = "10.1109/AM-FPD.2016.7543648",
language = "English",
series = "Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "153--156",
booktitle = "Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices",
}