Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiNx/HfO2 passivation layers

Shu Ming Hsu, Yun Shiuan Li, Min Sheng Tu, Jyun Ci He, I. Chung Chiu, Pin Guang Chen, Min Hung Lee, Jian Zhang Chen, I. Chun Cheng

研究成果: 書貢獻/報告類型會議論文篇章

1 引文 斯高帕斯(Scopus)

摘要

In this letter, we report enhanced gate-bias and current stress stability of p-type SnO thin-film transistors passivated with SiNx/HfO2 layers. The improvement is primarily attributed to the effective suppression of bias-induced adsorption of oxygen molecules on the back-channel surface by the presence of passivation layers. Under the gate-bias stress of 10 V and -10 V for 10000 s, the threshold voltage shifts for the passivated TFT are 0.75 V and -0.42 V respectively, while the corresponding values for the unpassivated one are 1.24 V and -0.77 V Under the current stress of 2.5 μA for 10000 s, the threshold voltage shift is -0.29 V for the passivated TFT and -0.63 V for the unpassivated one.

原文英語
主出版物標題Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices
主出版物子標題TFT Technologies and FPD Materials
發行者Institute of Electrical and Electronics Engineers Inc.
頁面153-156
頁數4
ISBN(電子)9784990875312
DOIs
出版狀態已發佈 - 2016 八月 15
事件23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016 - Kyoto, 日本
持續時間: 2016 七月 62016 七月 8

出版系列

名字Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

其他

其他23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016
國家/地區日本
城市Kyoto
期間2016/07/062016/07/08

ASJC Scopus subject areas

  • 電子、光磁材料
  • 硬體和架構
  • 電氣與電子工程

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