Enhancement-mode polymer space-charge-limited transistor with low switching swing of 96 mV/decade

Yu Chiang Chao; Hung Kuo Tsai; Hsiao Wen Zan; Yung Hsuan Hsu; Hsin Fei Meng; Sheng Fu Horng

doi:10.1063/1.3586255

Enhancement-mode polymer space-charge-limited transistor with low switching swing of 96 mV/decade

Yu Chiang Chao, Hung Kuo Tsai, Hsiao Wen Zan^*, Yung Hsuan Hsu, Hsin Fei Meng, Sheng Fu Horng

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

10 引文斯高帕斯（Scopus）

摘要

In this letter, an enhancement-mode polymer space-charge-limited transistor was realized with a low switching swing of 96 mV/decade, a low operation voltage of 1.5 V, and a high on/off current ratio of 10⁴. By investigating the influence of the device's geometric parameters on the transistor characteristics, a low switching swing was obtained by positioning the base electrode at the middle of the channel length and reducing the opening diameter. Simulations of the potential distribution at the central vertical channel verified that the base electrode has the best control over the magnitude of potential barrier, resulting in a low switching swing.

原文	英語
文章編號	223303
期刊	Applied Physics Letters
卷	98
發行號	22
DOIs	https://doi.org/10.1063/1.3586255
出版狀態	已發佈 - 2011 5月 30
對外發佈	是

ASJC Scopus subject areas

物理與天文學（雜項）

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10.1063/1.3586255

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title = "Enhancement-mode polymer space-charge-limited transistor with low switching swing of 96 mV/decade",

abstract = "In this letter, an enhancement-mode polymer space-charge-limited transistor was realized with a low switching swing of 96 mV/decade, a low operation voltage of 1.5 V, and a high on/off current ratio of 104. By investigating the influence of the device's geometric parameters on the transistor characteristics, a low switching swing was obtained by positioning the base electrode at the middle of the channel length and reducing the opening diameter. Simulations of the potential distribution at the central vertical channel verified that the base electrode has the best control over the magnitude of potential barrier, resulting in a low switching swing.",

author = "Chao, {Yu Chiang} and Tsai, {Hung Kuo} and Zan, {Hsiao Wen} and Hsu, {Yung Hsuan} and Meng, {Hsin Fei} and Horng, {Sheng Fu}",

note = "Funding Information: This work was supported by the National Science Council of Taiwan under Contract No. NSC 99-2628-M-009-001.",

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AU - Chao, Yu Chiang

AU - Tsai, Hung Kuo

AU - Zan, Hsiao Wen

AU - Hsu, Yung Hsuan

AU - Meng, Hsin Fei

AU - Horng, Sheng Fu

N1 - Funding Information: This work was supported by the National Science Council of Taiwan under Contract No. NSC 99-2628-M-009-001.

PY - 2011/5/30

Y1 - 2011/5/30

N2 - In this letter, an enhancement-mode polymer space-charge-limited transistor was realized with a low switching swing of 96 mV/decade, a low operation voltage of 1.5 V, and a high on/off current ratio of 104. By investigating the influence of the device's geometric parameters on the transistor characteristics, a low switching swing was obtained by positioning the base electrode at the middle of the channel length and reducing the opening diameter. Simulations of the potential distribution at the central vertical channel verified that the base electrode has the best control over the magnitude of potential barrier, resulting in a low switching swing.

AB - In this letter, an enhancement-mode polymer space-charge-limited transistor was realized with a low switching swing of 96 mV/decade, a low operation voltage of 1.5 V, and a high on/off current ratio of 104. By investigating the influence of the device's geometric parameters on the transistor characteristics, a low switching swing was obtained by positioning the base electrode at the middle of the channel length and reducing the opening diameter. Simulations of the potential distribution at the central vertical channel verified that the base electrode has the best control over the magnitude of potential barrier, resulting in a low switching swing.

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Enhancement-mode polymer space-charge-limited transistor with low switching swing of 96 mV/decade

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