摘要
In this letter, an enhancement-mode polymer space-charge-limited transistor was realized with a low switching swing of 96 mV/decade, a low operation voltage of 1.5 V, and a high on/off current ratio of 104. By investigating the influence of the device's geometric parameters on the transistor characteristics, a low switching swing was obtained by positioning the base electrode at the middle of the channel length and reducing the opening diameter. Simulations of the potential distribution at the central vertical channel verified that the base electrode has the best control over the magnitude of potential barrier, resulting in a low switching swing.
原文 | 英語 |
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文章編號 | 223303 |
期刊 | Applied Physics Letters |
卷 | 98 |
發行號 | 22 |
DOIs | |
出版狀態 | 已發佈 - 2011 5月 30 |
對外發佈 | 是 |
ASJC Scopus subject areas
- 物理與天文學(雜項)