Enhancement-mode polymer space-charge-limited transistor with low switching swing of 96 mV/decade

Yu Chiang Chao, Hung Kuo Tsai, Hsiao Wen Zan, Yung Hsuan Hsu, Hsin Fei Meng, Sheng Fu Horng

    研究成果: 雜誌貢獻期刊論文同行評審

    10 引文 斯高帕斯(Scopus)

    摘要

    In this letter, an enhancement-mode polymer space-charge-limited transistor was realized with a low switching swing of 96 mV/decade, a low operation voltage of 1.5 V, and a high on/off current ratio of 104. By investigating the influence of the device's geometric parameters on the transistor characteristics, a low switching swing was obtained by positioning the base electrode at the middle of the channel length and reducing the opening diameter. Simulations of the potential distribution at the central vertical channel verified that the base electrode has the best control over the magnitude of potential barrier, resulting in a low switching swing.

    原文英語
    文章編號223303
    期刊Applied Physics Letters
    98
    發行號22
    DOIs
    出版狀態已發佈 - 2011 五月 30

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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