Enhancement and inverse behaviors of magnetoimpedance in a magnetotunneling junction by driving frequency

W. C. Chien, C. K. Lo, L. C. Hsieh, Y. D. Yao, X. F. Han, Z. M. Zeng, T. Y. Peng, P. Lin

研究成果: 雜誌貢獻期刊論文同行評審

20 引文 斯高帕斯(Scopus)

摘要

The magnetoimpedance effect was employed to study magnetotunneling junction (MTJ) with the structure of Ru (5 nm) Cu (10 nm) Ru (5 nm) IrMn (10 nm) CoFeB (4 nm) Al (1.2 nm) -oxideCoFeB (4 nm) Ru (5 nm). A huge change of more than ±17 000% was observed in the imaginary part of the impedance between the magnetically parallel and antiparallel states of the MTJ. The inverse behavior of the magnetoimpedance (MI) loop occurs beyond 21.1 MHz; however, the normal MI at low frequency and the inverse MI at high frequency exhibit the same magnetization reversal as checked by the Kerr effect. The reversal in MI was due to the dominance of magnetocapacitance at high frequency.

原文英語
文章編號202515
期刊Applied Physics Letters
89
發行號20
DOIs
出版狀態已發佈 - 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

指紋 深入研究「Enhancement and inverse behaviors of magnetoimpedance in a magnetotunneling junction by driving frequency」主題。共同形成了獨特的指紋。

引用此