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Enhanced polarization and mechanisms in optically pumped hyperpolarized He3 in the presence of He4

  • Hsin Hsien Chen
  • , Hong Chang Yang*
  • , Herng Er Horng
  • , Y. Y. Lee
  • , Shu Hsien Liao
  • , S. Y. Yang
  • , Chung Hsien Chou
  • , Lieh Jeng Chang
  • , M. J. Chen
  • , M. Y. Chern
  • *此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

3   連結會在新分頁中打開 引文 斯高帕斯(Scopus)

摘要

This work reports an enhanced polarization and mechanisms in optically pumped (OP) hyperpolarized He3 in the presence of He4. The cells contain Rb metal, 60-torr N2, and different pressures of He3 and He4. In the absence of He4, the polarization of He3 increases monotonically from 4.5% to 8% when the pressure of He3 is increased from 300 to 1500 torr. In the presence of 1850-torr He4 gas, the polarization of He3 is enhanced from 7% to 30% for a cell containing 600-torr He3 and 60-torr N2. The wall relaxation factors X for OP cells with and without buffering He4 gas were derived. It was found that the He4 gas confines the He3 atoms to a diffusion-limited region which effectively reduces the wall relaxation factor X. Mechanisms contributed to relaxation are addressed and discussed.

原文英語
文章編號033422
期刊Physical Review A - Atomic, Molecular, and Optical Physics
81
發行號3
DOIs
出版狀態已發佈 - 2010 3月 26

ASJC Scopus subject areas

  • 原子與分子物理與光學

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