Enhanced dynamic annealing in Ga+ ion-implanted GaN nanowires

S. Dhara; A. Datta; C. T. Wu; Z. H. Lan; K. H. Chen; Y. L. Wang; L. C. Chen; C. W. Hsu; H. M. Lin; C. C. Chen

doi:10.1063/1.1536250

Enhanced dynamic annealing in Ga⁺ ion-implanted GaN nanowires

S. Dhara^*
, A. Datta
, C. T. Wu
, Z. H. Lan
, K. H. Chen
, Y. L. Wang
, L. C. Chen
, C. W. Hsu
, H. M. Lin
, C. C. Chen

^*此作品的通信作者

化學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

67 引文斯高帕斯（Scopus）

摘要

A study of Ga⁺ ion implantation of chemical-vapor-deposited GaN nanowires (NW) was presented. Observation of the defect structures in the irradiated samples suggested agglomeration of point-defect clusters to be the major component of disorder at high fluences. The results showed that dynamic annealing plays an important role in emphasizing the layer-by-layer structure of defect accumulation in the intermediate fluence range.

原文	英語
頁（從 - 到）	451-453
頁數	3
期刊	Applied Physics Letters
卷	82
發行號	3
DOIs	https://doi.org/10.1063/1.1536250
出版狀態	已發佈 - 2003 1月 20

ASJC Scopus subject areas

物理與天文學（雜項）

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10.1063/1.1536250

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abstract = "A study of Ga+ ion implantation of chemical-vapor-deposited GaN nanowires (NW) was presented. Observation of the defect structures in the irradiated samples suggested agglomeration of point-defect clusters to be the major component of disorder at high fluences. The results showed that dynamic annealing plays an important role in emphasizing the layer-by-layer structure of defect accumulation in the intermediate fluence range.",

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AU - Dhara, S.

AU - Datta, A.

AU - Wu, C. T.

AU - Lan, Z. H.

AU - Chen, K. H.

AU - Wang, Y. L.

AU - Chen, L. C.

AU - Hsu, C. W.

AU - Lin, H. M.

AU - Chen, C. C.

PY - 2003/1/20

Y1 - 2003/1/20

N2 - A study of Ga+ ion implantation of chemical-vapor-deposited GaN nanowires (NW) was presented. Observation of the defect structures in the irradiated samples suggested agglomeration of point-defect clusters to be the major component of disorder at high fluences. The results showed that dynamic annealing plays an important role in emphasizing the layer-by-layer structure of defect accumulation in the intermediate fluence range.

AB - A study of Ga+ ion implantation of chemical-vapor-deposited GaN nanowires (NW) was presented. Observation of the defect structures in the irradiated samples suggested agglomeration of point-defect clusters to be the major component of disorder at high fluences. The results showed that dynamic annealing plays an important role in emphasizing the layer-by-layer structure of defect accumulation in the intermediate fluence range.

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EP - 453

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Enhanced dynamic annealing in Ga+ ion-implanted GaN nanowires

摘要

ASJC Scopus subject areas

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Enhanced dynamic annealing in Ga⁺ ion-implanted GaN nanowires