Enhanced dynamic annealing in Ga+ ion-implanted GaN nanowires

S. Dhara*, A. Datta, C. T. Wu, Z. H. Lan, K. H. Chen, Y. L. Wang, L. C. Chen, C. W. Hsu, H. M. Lin, C. C. Chen

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

64 引文 斯高帕斯(Scopus)

摘要

A study of Ga+ ion implantation of chemical-vapor-deposited GaN nanowires (NW) was presented. Observation of the defect structures in the irradiated samples suggested agglomeration of point-defect clusters to be the major component of disorder at high fluences. The results showed that dynamic annealing plays an important role in emphasizing the layer-by-layer structure of defect accumulation in the intermediate fluence range.

原文英語
頁(從 - 到)451-453
頁數3
期刊Applied Physics Letters
82
發行號3
DOIs
出版狀態已發佈 - 2003 1月 20

ASJC Scopus subject areas

  • 物理與天文學(雜項)

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