Enhanced dynamic annealing in Ga+ ion-implanted GaN nanowires

S. Dhara, A. Datta, C. T. Wu, Z. H. Lan, K. H. Chen, Y. L. Wang, L. C. Chen, C. W. Hsu, H. M. Lin, C. C. Chen

研究成果: 雜誌貢獻文章

61 引文 斯高帕斯(Scopus)

摘要

A study of Ga+ ion implantation of chemical-vapor-deposited GaN nanowires (NW) was presented. Observation of the defect structures in the irradiated samples suggested agglomeration of point-defect clusters to be the major component of disorder at high fluences. The results showed that dynamic annealing plays an important role in emphasizing the layer-by-layer structure of defect accumulation in the intermediate fluence range.

原文英語
頁(從 - 到)451-453
頁數3
期刊Applied Physics Letters
82
發行號3
DOIs
出版狀態已發佈 - 2003 一月 20

    指紋

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

引用此

Dhara, S., Datta, A., Wu, C. T., Lan, Z. H., Chen, K. H., Wang, Y. L., Chen, L. C., Hsu, C. W., Lin, H. M., & Chen, C. C. (2003). Enhanced dynamic annealing in Ga+ ion-implanted GaN nanowires. Applied Physics Letters, 82(3), 451-453. https://doi.org/10.1063/1.1536250