Enhanced conversion efficiency of InGaN multiple quantum well solar cells grown on a patterned sapphire substrate

Ya Ju Lee; Min Hung Lee; Chun Mao Cheng; Chia Hao Yang

doi:10.1063/1.3605244

Enhanced conversion efficiency of InGaN multiple quantum well solar cells grown on a patterned sapphire substrate

Ya Ju Lee^*, Min Hung Lee, Chun Mao Cheng, Chia Hao Yang

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

38 引文斯高帕斯（Scopus）

摘要

This study demonstrated the enhanced conversion efficiency of an indium gallium nitride (InGaN) multiple quantum well (MQW) solar cell fabricated on a patterned sapphire substrate (PSS). Compared to conventional solar cells grown on a planar sapphire substrate, threading dislocation defects were found to be reduced from 1.28 ×10⁹ to 3.62 ×10⁸ cm ^-2, leading to an increase in short-circuit current density (J _SC = 1.09 mA·cm^-2) of approximately 60%. In addition, the open-circuit voltage and fill factor (V_OC = 2.05 V; FF = 51%) of the solar cells grown on PSS were nearly identical to those of conventional devices. The enhanced performance is primarily due to improvements in the crystalline quality of the epitaxial layers, reducing the trapping of photogenerated electrons and holes by nonradiative recombination centers in MQW, with a corresponding increase in the transport efficiency of the carriers outside the device.

原文	英語
文章編號	263504
期刊	Applied Physics Letters
卷	98
發行號	26
DOIs	https://doi.org/10.1063/1.3605244
出版狀態	已發佈 - 2011 6月 27

ASJC Scopus subject areas

物理與天文學（雜項）

存取文件

10.1063/1.3605244

其它文件與鏈接

引用此

@article{1b0f0b7f3b5b47f098edc3253963524e,

title = "Enhanced conversion efficiency of InGaN multiple quantum well solar cells grown on a patterned sapphire substrate",

abstract = "This study demonstrated the enhanced conversion efficiency of an indium gallium nitride (InGaN) multiple quantum well (MQW) solar cell fabricated on a patterned sapphire substrate (PSS). Compared to conventional solar cells grown on a planar sapphire substrate, threading dislocation defects were found to be reduced from 1.28 ×109 to 3.62 ×108 cm -2, leading to an increase in short-circuit current density (J SC = 1.09 mA·cm-2) of approximately 60%. In addition, the open-circuit voltage and fill factor (VOC = 2.05 V; FF = 51%) of the solar cells grown on PSS were nearly identical to those of conventional devices. The enhanced performance is primarily due to improvements in the crystalline quality of the epitaxial layers, reducing the trapping of photogenerated electrons and holes by nonradiative recombination centers in MQW, with a corresponding increase in the transport efficiency of the carriers outside the device.",

author = "Lee, {Ya Ju} and Lee, {Min Hung} and Cheng, {Chun Mao} and Yang, {Chia Hao}",

note = "Funding Information: The authors gratefully acknowledge financial support from the National Science Council of Republic of China (ROC) in Taiwan under contract Nos. NSC–98–2112–M–003–001–MY2, NSC 98-2221-E-003-020-MY3, and NSC–98–3114–E–002–003–CC2 and technical support by Professor C. W. Liu, Graduate Institute of Electronics Engineering, National Taiwan University.",

year = "2011",

month = jun,

day = "27",

doi = "10.1063/1.3605244",

language = "English",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "26",

}

TY - JOUR

T1 - Enhanced conversion efficiency of InGaN multiple quantum well solar cells grown on a patterned sapphire substrate

AU - Lee, Ya Ju

AU - Lee, Min Hung

AU - Cheng, Chun Mao

AU - Yang, Chia Hao

N1 - Funding Information: The authors gratefully acknowledge financial support from the National Science Council of Republic of China (ROC) in Taiwan under contract Nos. NSC–98–2112–M–003–001–MY2, NSC 98-2221-E-003-020-MY3, and NSC–98–3114–E–002–003–CC2 and technical support by Professor C. W. Liu, Graduate Institute of Electronics Engineering, National Taiwan University.

PY - 2011/6/27

Y1 - 2011/6/27

N2 - This study demonstrated the enhanced conversion efficiency of an indium gallium nitride (InGaN) multiple quantum well (MQW) solar cell fabricated on a patterned sapphire substrate (PSS). Compared to conventional solar cells grown on a planar sapphire substrate, threading dislocation defects were found to be reduced from 1.28 ×109 to 3.62 ×108 cm -2, leading to an increase in short-circuit current density (J SC = 1.09 mA·cm-2) of approximately 60%. In addition, the open-circuit voltage and fill factor (VOC = 2.05 V; FF = 51%) of the solar cells grown on PSS were nearly identical to those of conventional devices. The enhanced performance is primarily due to improvements in the crystalline quality of the epitaxial layers, reducing the trapping of photogenerated electrons and holes by nonradiative recombination centers in MQW, with a corresponding increase in the transport efficiency of the carriers outside the device.

AB - This study demonstrated the enhanced conversion efficiency of an indium gallium nitride (InGaN) multiple quantum well (MQW) solar cell fabricated on a patterned sapphire substrate (PSS). Compared to conventional solar cells grown on a planar sapphire substrate, threading dislocation defects were found to be reduced from 1.28 ×109 to 3.62 ×108 cm -2, leading to an increase in short-circuit current density (J SC = 1.09 mA·cm-2) of approximately 60%. In addition, the open-circuit voltage and fill factor (VOC = 2.05 V; FF = 51%) of the solar cells grown on PSS were nearly identical to those of conventional devices. The enhanced performance is primarily due to improvements in the crystalline quality of the epitaxial layers, reducing the trapping of photogenerated electrons and holes by nonradiative recombination centers in MQW, with a corresponding increase in the transport efficiency of the carriers outside the device.

UR - http://www.scopus.com/inward/record.url?scp=79960079186&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79960079186&partnerID=8YFLogxK

U2 - 10.1063/1.3605244

DO - 10.1063/1.3605244

M3 - Article

AN - SCOPUS:79960079186

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 263504

ER -

Enhanced conversion efficiency of InGaN multiple quantum well solar cells grown on a patterned sapphire substrate

摘要

ASJC Scopus subject areas

存取文件

其它文件與鏈接

指紋

引用此