Enhanced conversion efficiency of InGaN multiple quantum well solar cells grown on a patterned sapphire substrate

Ya Ju Lee*, Min Hung Lee, Chun Mao Cheng, Chia Hao Yang

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

35 引文 斯高帕斯(Scopus)

摘要

This study demonstrated the enhanced conversion efficiency of an indium gallium nitride (InGaN) multiple quantum well (MQW) solar cell fabricated on a patterned sapphire substrate (PSS). Compared to conventional solar cells grown on a planar sapphire substrate, threading dislocation defects were found to be reduced from 1.28 ×109 to 3.62 ×108 cm -2, leading to an increase in short-circuit current density (J SC = 1.09 mA·cm-2) of approximately 60%. In addition, the open-circuit voltage and fill factor (VOC = 2.05 V; FF = 51%) of the solar cells grown on PSS were nearly identical to those of conventional devices. The enhanced performance is primarily due to improvements in the crystalline quality of the epitaxial layers, reducing the trapping of photogenerated electrons and holes by nonradiative recombination centers in MQW, with a corresponding increase in the transport efficiency of the carriers outside the device.

原文英語
文章編號263504
期刊Applied Physics Letters
98
發行號26
DOIs
出版狀態已發佈 - 2011 六月 27

ASJC Scopus subject areas

  • 物理與天文學(雜項)

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