Energy-efficient HfAlOx NCFET: Using gate strain and defect passivation to realize nearly hysteresis-free sub-25mV/dec switch with ultralow leakage

Chia Chi Fan, Chun Hu Cheng, Yi Ru Chen, Chien Liu, Chun Yen Chang

研究成果: 書貢獻/報告類型會議論文篇章

16 引文 斯高帕斯(Scopus)

摘要

We experimentally demonstrated that ferroelectric HfAlOx negative capacitance FETs using gate strain and defect passivation can realize a nearly hysteresis-free forward/reverse swing of <25 mV/dec for symmetric switch, a wide sub-60 mV/dec SS range over 4 decade of IDS to reach an ultralow Ioff of 4 fA/μm, and a very high Ion/Ioff ratio of >108. Under the influence of gate strain and negative capacitance, the NCFETs exhibits 66% Ion enhancement and 27% VT reduction. In addition, the fluorine defect passivation reduces oxygen vacancies of gate stack to further mitigate interface depolarization field and help to significantly reinforce surface potential amplification effect during NC operation.

原文英語
主出版物標題2017 IEEE International Electron Devices Meeting, IEDM 2017
發行者Institute of Electrical and Electronics Engineers Inc.
頁面23.2.1-23.2.4
ISBN(電子)9781538635599
DOIs
出版狀態已發佈 - 2018 一月 23
事件63rd IEEE International Electron Devices Meeting, IEDM 2017 - San Francisco, 美国
持續時間: 2017 十二月 22017 十二月 6

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
ISSN(列印)0163-1918

其他

其他63rd IEEE International Electron Devices Meeting, IEDM 2017
國家/地區美国
城市San Francisco
期間2017/12/022017/12/06

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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